Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Конфигурация диода | Технология | Напряжение - Обратный постоянный ток (Vr) (макс.) | Ток - Средний выпрямленный (Io) (на диод) | Напряжение - Прямой (Vf) (макс.) @ If | Скорость | Время обратного восстановления (trr) | Ток - Обратный утечка @ Vr | Рабочая температура - Переход | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
MBR600200CTDIODE MOD SCHOT 200V 300A 2TOWER GeneSiC Semiconductor |
0 |
|
![]() Таблицы данных |
- | Twin Tower | Bulk | Active | 1 Pair Common Cathode | Schottky | 200 V | 300A | 920 mV @ 300 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3 mA @ 200 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
![]() |
MBR600200CTRDIODE MOD SCHOT 200V 300A 2TOWER GeneSiC Semiconductor |
0 |
|
![]() Таблицы данных |
- | Twin Tower | Bulk | Active | 1 Pair Common Anode | Schottky | 200 V | 300A | 920 mV @ 300 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3 mA @ 200 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
![]() |
MURT40040DIODE MODULE GP 400V 200A 3TOWER GeneSiC Semiconductor |
0 |
|
![]() Таблицы данных |
- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 400 V | 200A | 1.35 V @ 200 A | Fast Recovery =< 500ns, > 200mA (Io) | 180 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
![]() |
MUR40010CTDIODE MODULE GP 100V 200A 2TOWER GeneSiC Semiconductor |
0 |
|
![]() Таблицы данных |
- | Twin Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 100 V | 200A | 1.3 V @ 125 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 25 µA @ 50 V | - | - | - | Chassis Mount | Twin Tower |
![]() |
MUR40010CTRDIODE MODULE GP 100V 200A 2TOWER GeneSiC Semiconductor |
0 |
|
![]() Таблицы данных |
- | Twin Tower | Bulk | Active | 1 Pair Common Anode | Standard | 100 V | 200A | 1.3 V @ 125 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
![]() |
MUR40020CTDIODE MODULE GP 200V 200A 2TOWER GeneSiC Semiconductor |
0 |
|
![]() Таблицы данных |
- | Twin Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 200 V | 200A | 1.3 V @ 125 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
![]() |
MUR40020CTRDIODE MODULE GP 200V 200A 2TOWER GeneSiC Semiconductor |
0 |
|
![]() Таблицы данных |
- | Twin Tower | Bulk | Active | 1 Pair Common Anode | Standard | 200 V | 200A | 1.3 V @ 125 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
![]() |
MUR40040CTDIODE MODULE GP 400V 200A 2TOWER GeneSiC Semiconductor |
0 |
|
![]() Таблицы данных |
- | Twin Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 400 V | 200A | 1.3 V @ 125 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
![]() |
MUR40040CTRDIODE MODULE GP 400V 200A 2TOWER GeneSiC Semiconductor |
0 |
|
![]() Таблицы данных |
- | Twin Tower | Bulk | Active | 1 Pair Common Anode | Standard | 400 V | 200A | 1.3 V @ 125 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
![]() |
MUR40060CTDIODE MODULE GP 600V 200A 2TOWER GeneSiC Semiconductor |
0 |
|
![]() Таблицы данных |
- | Twin Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 600 V | 200A | 1.3 V @ 125 A | Fast Recovery =< 500ns, > 200mA (Io) | 180 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |