БОМ
FET, MOSFET
| Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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STP50N65DM6MOSFET N-CH 650V 33A TO220 |
0 |
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Таблицы данных |
MDmesh™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 33A (Tc) | 10V | 91mOhm @ 16.5A, 10V | 4.75V @ 250µA | 52.5 nC @ 10 V | ±25V | 2300 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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IRFB13N50AMOSFET N-CH 500V 14A TO220AB |
0 |
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Таблицы данных |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 14A (Tc) | 10V | 450mOhm @ 8.4A, 10V | 4V @ 250µA | 81 nC @ 10 V | ±30V | 1910 pF @ 25 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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AUIRFS3004TRLMOSFET N-CH 40V 195A D2PAK-3 |
0 |
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Таблицы данных |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 1.75mOhm @ 195A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 9200 pF @ 25 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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2SK3747-MG8MOSFET N-CH 1500V 2A TO3PML |
0 |
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- |
- | TO-3P-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1500 V | 2A (Ta) | 10V | 13Ohm @ 1A, 10V | - | 37.5 nC @ 10 V | ±35V | 380 pF @ 30 V | - | - | 150°C (TJ) | - | - | Through Hole | TO-3PML |
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IXTC26N50PMOSFET N-CH 500V 15A ISOPLUS220 |
0 |
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- |
PolarHV™ | ISOPLUS220™ | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 15A (Tc) | 10V | 260mOhm @ 13A, 10V | 5.5V @ 250µA | 65 nC @ 10 V | ±30V | 3600 pF @ 25 V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS220™ |
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E3M0280090DSICFET N-CH 900V 11.5A TO247-3 |
0 |
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Таблицы данных |
E-Series | TO-247-3 | Tube | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 900 V | 11.5A (Tc) | 15V | 364mOhm @ 7.5A, 15V | 3.5V @ 1.2mA | 9.5 nC @ 15 V | +18V, -8V | 150 pF @ 600 V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
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IRL1404STRLPBFMOSFET N-CH 40V 160A D2PAK |
0 |
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Таблицы данных |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 4.3V, 10V | 4mOhm @ 95A, 10V | 3V @ 250µA | 140 nC @ 5 V | ±20V | 6600 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IPLU250N04S41R7XTMA1MOSFET N-CH 40V 250A 8HSOF |
0 |
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Таблицы данных |
OptiMOS™ | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 250A (Tc) | 10V | 1.7mOhm @ 100A, 10V | 4V @ 80µA | 100 nC @ 10 V | ±20V | 7900 pF @ 25 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HSOF-8-1 |
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STB25NM60N-1MOSFET N-CH 600V 21A I2PAK |
0 |
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Таблицы данных |
MDmesh™ II | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 160mOhm @ 10.5A, 10V | 4V @ 250µA | 84 nC @ 10 V | ±25V | 2400 pF @ 50 V | - | 160W (Tc) | 150°C (TJ) | - | - | Through Hole | I2PAK |
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STW52N60DM6DISCRETE |
0 |
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- |
- | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 45A (Tc) | 10V | 74mOhm @ 22.5A, 10V | 4.75V @ 250µA | 52 nC @ 10 V | ±25V | 2468 pF @ 100 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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BTS282ZE3180AATMA2MOSFET N-CH 49V 80A TO263-7 |
0 |
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Таблицы данных |
TEMPFET® | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 49 V | 80A (Tc) | 4.5V, 10V | 6.5mOhm @ 36A, 10V | 2V @ 240µA | 232 nC @ 10 V | ±20V | 4800 pF @ 25 V | Temperature Sensing Diode | 300W (Tc) | -40°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-1 |
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AUIRFS4115TRLMOSFET N-CH 150V 99A D2PAK |
0 |
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Таблицы данных |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 150 V | 99A (Tc) | 10V | 12.1mOhm @ 62A, 10V | 5V @ 250µA | 120 nC @ 10 V | ±20V | 5270 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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TSM60NB190CZ600V, 18A, SINGLE N-CHANNEL POWE |
0 |
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- |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 190mOhm @ 6A, 10V | 4V @ 250µA | 31 nC @ 10 V | ±30V | 1273 pF @ 100 V | - | 150.6W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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STB50N65DM6MOSFET N-CH 650V 33A D2PAK |
0 |
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Таблицы данных |
MDmesh™ DM6 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 33A (Tc) | 10V | 91mOhm @ 16.5A, 10V | 4.75V @ 250µA | 52.5 nC @ 10 V | ±25V | 2300 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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STW25NM60NMOSFET N-CH 600V 21A TO247-3 |
0 |
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Таблицы данных |
MDmesh™ II | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 160mOhm @ 10.5A, 10V | 4V @ 250µA | 84 nC @ 10 V | ±25V | 2400 pF @ 50 V | - | 160W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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SPB11N60S5ATMA1MOSFET N-CH 600V 11A TO263-3 |
0 |
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Таблицы данных |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 5.5V @ 500µA | 54 nC @ 10 V | ±20V | 1460 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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SPB80N10L GMOSFET N-CH 100V 80A TO263-3 |
0 |
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Таблицы данных |
SIPMOS® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 4.5V, 10V | 14mOhm @ 58A, 10V | 2V @ 2mA | 240 nC @ 10 V | ±20V | 4540 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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FDB8443MOSFET N-CH 40V 25A/120A TO263AB |
0 |
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Таблицы данных |
PowerTrench® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 25A (Ta), 120A (Tc) | 10V | 3mOhm @ 80A, 10V | 4V @ 250µA | 185 nC @ 10 V | ±20V | 9310 pF @ 25 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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STH110N10F7-6MOSFET N-CH 100V 110A H2PAK-6 |
0 |
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Таблицы данных |
DeepGATE™, STripFET™ VII | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 110A (Tc) | 10V | 6.5mOhm @ 55A, 10V | 4.5V @ 250µA | 72 nC @ 10 V | ±20V | 5117 pF @ 50 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | H2PAK-6 |
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IXTH102N15TMOSFET N-CH 150V 102A TO247 |
0 |
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Таблицы данных |
Trench | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 102A (Tc) | 10V | 18mOhm @ 500mA, 10V | 5V @ 1mA | 87 nC @ 10 V | ±20V | 5220 pF @ 25 V | - | 455W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
