| Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Напряжение - Обратный постоянный ток (Vr) (макс.) | Ток - Средний выпрямленный (Io) | Напряжение - Прямой (Vf) (макс.) @ If | Скорость | Время обратного восстановления (trr) | Ток - Обратный утечка @ Vr | Емкость @ Vr, F | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка | Рабочая температура - Переход |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NSB8AT-E3/45DIODE GEN PURP 50V 8A TO263AB Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | Standard | 50 V | 8A | 1.1 V @ 8 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | 55pF @ 4V, 1MHz | - | - | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 150°C |
|
NSB8BT-E3/45DIODE GEN PURP 100V 8A TO263AB Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | Standard | 100 V | 8A | 1.1 V @ 8 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | 55pF @ 4V, 1MHz | - | - | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 150°C |
|
NSB8DT-E3/45DIODE GEN PURP 200V 8A TO263AB Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | Standard | 200 V | 8A | 1.1 V @ 8 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 200 V | 55pF @ 4V, 1MHz | - | - | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 150°C |
|
NSB8JT-E3/45DIODE GEN PURP 600V 8A TO263AB Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | Standard | 600 V | 8A | 1.1 V @ 8 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 600 V | 55pF @ 4V, 1MHz | - | - | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 150°C |
|
NSB8KT-E3/45DIODE GEN PURP 800V 8A TO263AB Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | Standard | 800 V | 8A | 1.1 V @ 8 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 800 V | 55pF @ 4V, 1MHz | - | - | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 150°C |
|
NSB8MT-E3/45DIODE GEN PURP 1KV 8A TO263AB Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | Standard | 1000 V | 8A | 1.1 V @ 8 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1000 V | 55pF @ 4V, 1MHz | - | - | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 150°C |
|
BYV98-200-TAPDIODE AVALANCHE 200V 4A SOD64 Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
- | SOD-64, Axial | Tape & Box (TB) | Active | Avalanche | 200 V | 4A | 1.1 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 200 V | - | - | - | Through Hole | SOD-64 | -55°C ~ 175°C |
|
BYW178-TAPDIODE AVALANCHE 800V 3A SOD64 Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
- | SOD-64, Axial | Tape & Box (TB) | Active | Avalanche | 800 V | 3A | 1.9 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 1 µA @ 800 V | - | - | - | Through Hole | SOD-64 | -55°C ~ 175°C |
|
SF5406-TAPDIODE GEN PURP 600V 3A SOD64 Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
- | SOD-64, Axial | Tape & Box (TB) | Active | Standard | 600 V | 3A | 1.7 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 600 V | - | - | - | Through Hole | SOD-64 | -55°C ~ 175°C |
|
SF5407-TAPDIODE GEN PURP 800V 3A SOD64 Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
- | SOD-64, Axial | Tape & Box (TB) | Active | Standard | 800 V | 3A | 1.7 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 800 V | - | - | - | Through Hole | SOD-64 | -55°C ~ 175°C |