| Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Напряжение - Обратный постоянный ток (Vr) (макс.) | Ток - Средний выпрямленный (Io) | Напряжение - Прямой (Vf) (макс.) @ If | Скорость | Время обратного восстановления (trr) | Ток - Обратный утечка @ Vr | Емкость @ Vr, F | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка | Рабочая температура - Переход |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BYT56J-TAPDIODE AVALANCHE 600V 3A SOD64 Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
- | SOD-64, Axial | Tape & Box (TB) | Active | Avalanche | 600 V | 3A | 1.4 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 5 µA @ 600 V | - | - | - | Through Hole | SOD-64 | -55°C ~ 175°C |
|
BYT77-TAPDIODE AVALANCHE 800V 3A SOD64 Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
- | SOD-64, Axial | Tape & Box (TB) | Active | Avalanche | 800 V | 3A | 1.2 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 5 µA @ 800 V | - | - | - | Through Hole | SOD-64 | -55°C ~ 175°C |
|
BYW73-TAPDIODE AVALANCHE 300V 3A SOD64 Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
- | SOD-64, Axial | Tape & Box (TB) | Active | Avalanche | 300 V | 3A | 1.1 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 5 µA @ 300 V | - | - | - | Through Hole | SOD-64 | -55°C ~ 175°C |
|
BYT56J-TRDIODE AVALANCHE 600V 3A SOD64 Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
- | SOD-64, Axial | Tape & Reel (TR) | Active | Avalanche | 600 V | 3A | 1.4 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 5 µA @ 600 V | - | - | - | Through Hole | SOD-64 | -55°C ~ 175°C |
|
BYT77-TRDIODE AVALANCHE 800V 3A SOD64 Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
- | SOD-64, Axial | Tape & Reel (TR) | Active | Avalanche | 800 V | 3A | 1.2 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 5 µA @ 800 V | - | - | - | Through Hole | SOD-64 | -55°C ~ 175°C |
|
BYW73-TRDIODE AVALANCHE 300V 3A SOD64 Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
- | SOD-64, Axial | Tape & Reel (TR) | Active | Avalanche | 300 V | 3A | 1.1 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 5 µA @ 300 V | - | - | - | Through Hole | SOD-64 | -55°C ~ 175°C |
|
BYW83-TRDIODE AVALANCHE 400V 3A SOD64 Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
- | SOD-64, Axial | Tape & Reel (TR) | Active | Avalanche | 400 V | 3A | 1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 7.5 µs | 1 µA @ 400 V | 60pF @ 4V, 1MHz | - | - | Through Hole | SOD-64 | -55°C ~ 175°C |
|
|
VS-8ETH06-1-M3DIODE GEN PURP 600V 8A TO262AA Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
FRED Pt® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | Standard | 600 V | 8A | 2.4 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 50 µA @ 600 V | - | - | - | Through Hole | TO-262AA | -65°C ~ 175°C |
|
|
VIT1080S-M3/4WDIODE SCHOTTKY 80V 10A TO262AA Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | Schottky | 80 V | 10A | 810 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600 µA @ 80 V | - | - | - | Through Hole | TO-262AA | -55°C ~ 150°C |
|
|
VS-8ETX06-1-M3DIODE GEN PURP 600V 8A TO262AA Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
FRED Pt® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | Standard | 600 V | 8A | 3 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 24 ns | 50 µA @ 600 V | - | - | - | Through Hole | TO-262AA | -65°C ~ 175°C |