| Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Напряжение - Обратный постоянный ток (Vr) (макс.) | Ток - Средний выпрямленный (Io) | Напряжение - Прямой (Vf) (макс.) @ If | Скорость | Время обратного восстановления (trr) | Ток - Обратный утечка @ Vr | Емкость @ Vr, F | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка | Рабочая температура - Переход |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BYT51A-TAPDIODE AVALANCHE 50V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
- | SOD-57, Axial | Tape & Box (TB) | Active | Avalanche | 50 V | 1.5A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 4 µs | 1 µA @ 50 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
|
BYT51B-TAPDIODE AVALANCHE 100V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
- | SOD-57, Axial | Tape & Box (TB) | Active | Avalanche | 100 V | 1.5A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 4 µs | 1 µA @ 100 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
|
BYX82TAPDIODE AVALANCHE 200V 2A SOD57 Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
- | SOD-57, Axial | Tape & Box (TB) | Active | Avalanche | 200 V | 2A | 1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 4 µs | 1 µA @ 200 V | 20pF @ 4V, 1MHz | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
|
BYT51A-TRDIODE AVALANCHE 50V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
- | SOD-57, Axial | Tape & Reel (TR) | Active | Avalanche | 50 V | 1.5A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 4 µs | 1 µA @ 50 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
|
BYT51B-TRDIODE AVALANCHE 100V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
- | SOD-57, Axial | Tape & Reel (TR) | Active | Avalanche | 100 V | 1.5A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 4 µs | 1 µA @ 100 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
|
BYX82TRDIODE AVALANCHE 200V 2A SOD57 Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
- | SOD-57, Axial | Tape & Reel (TR) | Active | Avalanche | 200 V | 2A | 1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 4 µs | 1 µA @ 200 V | 20pF @ 4V, 1MHz | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
|
V8P15-M3/IDIODE SCHOTTKY 150V 8A TO277A Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
eSMP®, TMBS® | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Schottky | 150 V | 8A | 1.08 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 150 V | - | - | - | Surface Mount | TO-277A (SMPC) | -40°C ~ 150°C |
|
V8PM10-M3/IDIODE SCHOTTKY 100V 8A TO277A Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
eSMP®, TMBS® | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Schottky | 100 V | 8A | 750 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 60 µA @ 100 V | - | - | - | Surface Mount | TO-277A (SMPC) | -40°C ~ 150°C |
|
S5AHE3/57TDIODE GEN PURP 50V 5A DO214AB Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
- | DO-214AB, SMC | Tape & Reel (TR) | Obsolete | Standard | 50 V | 5A | 1.15 V @ 5 A | Standard Recovery >500ns, > 200mA (Io) | 2.5 µs | 10 µA @ 50 V | 40pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | DO-214AB (SMC) | -55°C ~ 150°C |
|
S5BHE3/57TDIODE GEN PURP 100V 5A DO214AB Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
- | DO-214AB, SMC | Tape & Reel (TR) | Obsolete | Standard | 100 V | 5A | 1.15 V @ 5 A | Standard Recovery >500ns, > 200mA (Io) | 2.5 µs | 10 µA @ 100 V | 40pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | DO-214AB (SMC) | -55°C ~ 150°C |