| Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Напряжение - Обратный постоянный ток (Vr) (макс.) | Ток - Средний выпрямленный (Io) | Напряжение - Прямой (Vf) (макс.) @ If | Скорость | Время обратного восстановления (trr) | Ток - Обратный утечка @ Vr | Емкость @ Vr, F | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка | Рабочая температура - Переход |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BYG20JHM3_A/HDIODE AVAL 600V 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
0 |
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Таблицы данных |
- | DO-214AC, SMA | Tape & Reel (TR) | Active | Avalanche | 600 V | 1.5A | 1.4 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 1 µA @ 600 V | - | Automotive | AEC-Q101 | Surface Mount | DO-214AC (SMA) | -55°C ~ 150°C |
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BYG21K-M3/TRDIODE AVAL 800V 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
- | DO-214AC, SMA | Tape & Reel (TR) | Active | Avalanche | 800 V | 1.5A | 1.6 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 120 ns | 1 µA @ 800 V | - | - | - | Surface Mount | DO-214AC (SMA) | -55°C ~ 150°C |
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BYG10MHE3_A/IDIODE AVALANCHE 1KV 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
- | DO-214AC, SMA | Tape & Reel (TR) | Active | Avalanche | 1000 V | 1.5A | 1.15 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | 4 µs | 1 µA @ 1000 V | - | Automotive | AEC-Q101 | Surface Mount | DO-214AC (SMA) | -55°C ~ 150°C |
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SS2H10-M3/5BTDIODE SCHOTTKY 100V 2A DO214AA Vishay General Semiconductor - Diodes Division |
0 |
|
- |
- | DO-214AA, SMB | Tape & Reel (TR) | Active | Schottky | 100 V | 2A | 790 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Surface Mount | DO-214AA (SMB) | -65°C ~ 175°C |
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SS2H9-M3/5BTDIODE SCHOTTKY 90V 2A DO214AA Vishay General Semiconductor - Diodes Division |
0 |
|
- |
- | DO-214AA, SMB | Tape & Reel (TR) | Active | Schottky | 90 V | 2A | 790 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 µA @ 90 V | - | - | - | Surface Mount | DO-214AA (SMB) | -65°C ~ 175°C |
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MPG06B-E3/53DIODE GEN PURP 100V 1A MPG06 Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
- | MPG06, Axial | Tape & Box (TB) | Active | Standard | 100 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 600 ns | 5 µA @ 100 V | 10pF @ 4V, 1MHz | - | - | Through Hole | MPG06 | -55°C ~ 150°C |
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MPG06D-E3/53DIODE GEN PURP 200V 1A MPG06 Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
- | MPG06, Axial | Tape & Box (TB) | Active | Standard | 200 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 600 ns | 5 µA @ 200 V | 10pF @ 4V, 1MHz | - | - | Through Hole | MPG06 | -55°C ~ 150°C |
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MPG06G-E3/53DIODE GEN PURP 400V 1A MPG06 Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
- | MPG06, Axial | Tape & Box (TB) | Active | Standard | 400 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 600 ns | 5 µA @ 400 V | 10pF @ 4V, 1MHz | - | - | Through Hole | MPG06 | -55°C ~ 150°C |
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MPG06J-E3/53DIODE GEN PURP 600V 1A MPG06 Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
- | MPG06, Axial | Tape & Box (TB) | Active | Standard | 600 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 600 ns | 5 µA @ 600 V | 10pF @ 4V, 1MHz | - | - | Through Hole | MPG06 | -55°C ~ 150°C |
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MPG06K-E3/53DIODE GEN PURP 800V 1A MPG06 Vishay General Semiconductor - Diodes Division |
0 |
|
Таблицы данных |
- | MPG06, Axial | Tape & Box (TB) | Active | Standard | 800 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 600 ns | 5 µA @ 800 V | 10pF @ 4V, 1MHz | - | - | Through Hole | MPG06 | -55°C ~ 150°C |