Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Напряжение - Обратный постоянный ток (Vr) (макс.) | Ток - Средний выпрямленный (Io) | Напряжение - Прямой (Vf) (макс.) @ If | Скорость | Время обратного восстановления (trr) | Ток - Обратный утечка @ Vr | Емкость @ Vr, F | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка | Рабочая температура - Переход |
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V10PW60-M3/IDIODE SCHOTTKY 60V 10A SLIMDPAK Vishay General Semiconductor - Diodes Division |
3,813 |
|
![]() Таблицы данных |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | Schottky | 60 V | 10A | 570 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800 µA @ 100 V | 1580pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | SlimDPAK | -40°C ~ 150°C |
|
MUR440-E3/54DIODE GEN PURP 400V 4A DO201AD Vishay General Semiconductor - Diodes Division |
3,172 |
|
![]() Таблицы данных |
- | DO-201AD, Axial | Tape & Reel (TR) | Active | Standard | 400 V | 4A | 1.28 V @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 400 V | - | - | - | Through Hole | DO-201AD | -65°C ~ 175°C |
|
MUR420-E3/73DIODE GEN PURP 200V 4A DO201AD Vishay General Semiconductor - Diodes Division |
2,286 |
|
![]() Таблицы данных |
- | DO-201AD, Axial | Cut Tape (CT) | Active | Standard | 200 V | 4A | 890 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 200 V | - | - | - | Through Hole | DO-201AD | -65°C ~ 175°C |
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SS8P2L-M3/86ADIODE SCHOTTKY 20V 8A TO277A Vishay General Semiconductor - Diodes Division |
1,466 |
|
![]() Таблицы данных |
eSMP® | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Schottky | 20 V | 8A | 570 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 30 V | 330pF @ 4V, 1MHz | - | - | Surface Mount | TO-277A (SMPC) | -55°C ~ 150°C |
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BYV26A-TAPDIODE AVALANCHE 200V 1A SOD57 Vishay General Semiconductor - Diodes Division |
39,278 |
|
![]() Таблицы данных |
- | SOD-57, Axial | Cut Tape (CT) | Active | Avalanche | 200 V | 1A | 2.5 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 200 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
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BYW32-TRDIODE AVALANCHE 200V 2A SOD57 Vishay General Semiconductor - Diodes Division |
32,534 |
|
![]() Таблицы данных |
- | SOD-57, Axial | Tape & Reel (TR) | Active | Avalanche | 200 V | 2A | 1.1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 5 µA @ 200 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
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BYT51D-TRDIODE AVALANCHE 200V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
22,845 |
|
![]() Таблицы данных |
- | SOD-57, Axial | Tape & Reel (TR) | Active | Avalanche | 200 V | 1.5A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 4 µs | 1 µA @ 200 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
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V10P6-M3/86ADIODE SCHOTTKY 60V 4.3A TO277A Vishay General Semiconductor - Diodes Division |
11,188 |
|
![]() Таблицы данных |
eSMP®, TMBS® | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Schottky | 60 V | 4.3A | 590 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.9 mA @ 60 V | - | - | - | Surface Mount | TO-277A (SMPC) | -40°C ~ 150°C |
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BYW54-TAPDIODE AVALANCHE 600V 2A SOD57 Vishay General Semiconductor - Diodes Division |
5,635 |
|
![]() Таблицы данных |
- | SOD-57, Axial | Cut Tape (CT) | Active | Avalanche | 600 V | 2A | 1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 4 µs | 1 µA @ 600 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
|
UF5406-E3/54DIODE GEN PURP 600V 3A DO201AD Vishay General Semiconductor - Diodes Division |
5,403 |
|
![]() Таблицы данных |
- | DO-201AD, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 3A | 1.7 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 600 V | 36pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |