Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Напряжение - Обратный постоянный ток (Vr) (макс.) | Ток - Средний выпрямленный (Io) | Напряжение - Прямой (Vf) (макс.) @ If | Скорость | Время обратного восстановления (trr) | Ток - Обратный утечка @ Vr | Емкость @ Vr, F | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка | Рабочая температура - Переход |
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RB208RSM10STFTL1100V 15A, TO-277A, ULTRA LOW SBD Rohm Semiconductor |
0 |
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![]() Таблицы данных |
- | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Schottky | 100 V | 15A | 850 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5.2 µA @ 100 V | - | Automotive | AEC-Q101 | Surface Mount | TO-277A | 175°C |
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RB218RSM15STFTL1150V 20A, TO-277A, ULTRA LOW SBD Rohm Semiconductor |
0 |
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![]() Таблицы данных |
- | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Schottky | 150 V | 20A | 900 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8.3 µA @ 150 V | - | Automotive | AEC-Q101 | Surface Mount | TO-277A | 175°C |
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RB208RSM15STFTL1150V 15A, TO-277A, ULTRA LOW SBD Rohm Semiconductor |
0 |
|
![]() Таблицы данных |
- | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Schottky | 150 V | 15A | 880 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8.3 µA @ 150 V | - | Automotive | AEC-Q101 | Surface Mount | TO-277A | 175°C |
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SCS304AMC7GDIODE SIL CARB 650V 4A TO220FM Rohm Semiconductor |
0 |
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![]() Таблицы данных |
- | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.5 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 200pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C |
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SCS304AGC16DIODE SIL CARB 650V 4A TO220ACP Rohm Semiconductor |
0 |
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- |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.5 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 200pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACFP | 175°C |
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SCS306AMC7GDIODE SIL CARB 650V 6A TO220FM Rohm Semiconductor |
0 |
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![]() Таблицы данных |
- | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.5 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C |
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SCS306AGC16DIODE SIL CARB 650V 6A TO220ACP Rohm Semiconductor |
0 |
|
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.5 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACFP | 175°C |
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SCS308AMC7GDIODE SIL CARB 650V 8A TO220FM Rohm Semiconductor |
0 |
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![]() Таблицы данных |
- | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.5 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 400pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C |
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SCS308AGC16DIODE SIL CARB 650V 8A TO220ACP Rohm Semiconductor |
0 |
|
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.5 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 400pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACFP | 175°C |
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SCS312AMC7GDIODE SIL CARB 650V 12A TO220FM Rohm Semiconductor |
0 |
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![]() Таблицы данных |
- | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.5 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 600pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C |