Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Напряжение - Обратный постоянный ток (Vr) (макс.) | Ток - Средний выпрямленный (Io) | Напряжение - Прямой (Vf) (макс.) @ If | Скорость | Время обратного восстановления (trr) | Ток - Обратный утечка @ Vr | Емкость @ Vr, F | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка | Рабочая температура - Переход |
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SCS210KGHRCDIODE SIL CARB 1.2KV 10A TO220AC Rohm Semiconductor |
0 |
|
![]() Таблицы данных |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 550pF @ 1V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | 175°C (Max) |
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SCS308AMCDIODE SIL CARB 650V 8A TO220FM Rohm Semiconductor |
1 |
|
![]() Таблицы данных |
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.5 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 400pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C (Max) |
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SCS112AGCDIODE SIL CARB 600V 12A TO220AC Rohm Semiconductor |
0 |
|
![]() Таблицы данных |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 240 µA @ 600 V | 516pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
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SCS210KE2CDIODE SIL CARB 1.2KV 10A TO247 Rohm Semiconductor |
0 |
|
![]() Таблицы данных |
- | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 10A | - | No Recovery Time > 500mA (Io) | 0 ns | - | - | - | - | Through Hole | TO-247 | 175°C (Max) |
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SCS210AMCDIODE SIL CARB 650V 10A TO220FM Rohm Semiconductor |
4 |
|
![]() Таблицы данных |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.55 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 365pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C (Max) |
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SCS110AMCDIODE SIL CARB 600V 10A TO220FM Rohm Semiconductor |
0 |
|
![]() Таблицы данных |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 430pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 150°C (Max) |
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SCS215AMCDIODE SIL CARB 650V 12A TO220FM Rohm Semiconductor |
0 |
|
![]() Таблицы данных |
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.55 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 240 µA @ 600 V | 438pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C (Max) |
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SCS212AMCDIODE SIL CARB 650V 12A TO220FM Rohm Semiconductor |
0 |
|
![]() Таблицы данных |
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.55 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 240 µA @ 600 V | 438pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C (Max) |
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SCS312AMCDIODE SIL CARB 650V 12A TO220FM Rohm Semiconductor |
0 |
|
![]() Таблицы данных |
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.5 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 600pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C (Max) |
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SCS215KGCDIODE SIL CARB 1.2KV 15A TO220AC Rohm Semiconductor |
0 |
|
![]() Таблицы данных |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.6 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 1200 V | 790pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |