Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Напряжение - Обратный постоянный ток (Vr) (макс.) | Ток - Средний выпрямленный (Io) | Напряжение - Прямой (Vf) (макс.) @ If | Скорость | Время обратного восстановления (trr) | Ток - Обратный утечка @ Vr | Емкость @ Vr, F | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка | Рабочая температура - Переход |
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JANS1N5809URSDIODE GEN PURP 100V 6A B SQ-MELF Microchip Technology |
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- | SQ-MELF, B | Bulk | Active | Standard | 100 V | 6A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | - | - | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
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JANS1N5811URSDIODE GEN PURP 150V 6A B SQ-MELF Microchip Technology |
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- | SQ-MELF, B | Bulk | Active | Standard | 150 V | 6A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | - | - | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
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JANS1N5807URS/TRUFR,FRR Microchip Technology |
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![]() Таблицы данных |
- | SQ-MELF, B | Tape & Reel (TR) | Active | Standard | 50 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 50 V | 60pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
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JANS1N5809URS/TRUFR,FRR Microchip Technology |
0 |
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![]() Таблицы данных |
- | SQ-MELF, B | Tape & Reel (TR) | Active | Standard | 100 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
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JANS1N5811URS/TRUFR,FRR Microchip Technology |
0 |
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![]() Таблицы данных |
- | SQ-MELF, B | Tape & Reel (TR) | Active | Standard | 150 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 60pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
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1N3736DIODE GP 200V 275A DO205AB DO9 Microchip Technology |
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![]() Таблицы данных |
- | DO-205AB, DO-9, Stud | Bulk | Active | Standard | 200 V | 275A | 1.3 V @ 300 A | Standard Recovery >500ns, > 200mA (Io) | - | 75 µA @ 200 V | - | - | - | Stud Mount | DO-205AB (DO-9) | -65°C ~ 190°C |
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UES2606HR2DIODE GEN PURP 30A TO3 Microchip Technology |
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- | TO-204AA, TO-3 | Bulk | Active | Standard | - | 30A | 1.25 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | - | - | - | - | Through Hole | TO-3 | -55°C ~ 150°C |
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UES2606RHR2DIODE GEN PURP 30A TO3 Microchip Technology |
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- | TO-204AA, TO-3 | Bulk | Active | Standard | - | 30A | 1.25 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | - | - | - | - | Through Hole | TO-3 | -55°C ~ 150°C |
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1N6864US/TRDIODE SCHOTTKY 80V 3A B SQ-MELF Microchip Technology |
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- | SQ-MELF, B | Tape & Reel (TR) | Active | Schottky | 80 V | 3A | 700 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 80 V | - | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 125°C |
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JANTX1N6843U3DIODE SCHOTTKY 100V 10A U3 Microchip Technology |
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- | 3-SMD, No Lead | Bulk | Active | Schottky | 100 V | 10A | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Surface Mount | U3 (SMD-0.5) | -65°C ~ 150°C |