| Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Напряжение - Обратный постоянный ток (Vr) (макс.) | Ток - Средний выпрямленный (Io) | Напряжение - Прямой (Vf) (макс.) @ If | Скорость | Время обратного восстановления (trr) | Ток - Обратный утечка @ Vr | Емкость @ Vr, F | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка | Рабочая температура - Переход |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANS1N6640USDIODE GEN PURP 50V 300MA D-5D Microchip Technology |
0 |
|
- |
- | SQ-MELF, D | Bulk | Active | Standard | 50 V | 300mA | 1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | - | - | Military | MIL-PRF-19500/609 | Surface Mount | D-5D | -65°C ~ 175°C |
|
R30620RECTIFIER Microchip Technology |
0 |
|
Таблицы данных |
R306 | DO-203AB, DO-5, Stud | Bulk | Active | Standard, Reverse Polarity | 200 V | 70A | 1.25 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 200 V | - | - | - | Stud Mount | DO-203AB (DO-5) | -65°C ~ 200°C |
|
JANTX1N6080DIODE GEN PURP 100V 12A G AXIAL Microchip Technology |
0 |
|
- |
- | G, Axial | Bulk | Active | Standard | 100 V | 12A | 1.5 V @ 37.7 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 10 µA @ 100 V | - | Military | MIL-PRF-19500/503 | Through Hole | G, Axial | -65°C ~ 155°C |
|
JANTX1N6079DIODE GEN PURP 50V 2A G AXIAL Microchip Technology |
0 |
|
- |
- | G, Axial | Bulk | Active | Standard | 50 V | 2A | 1.5 V @ 37.7 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 10 µA @ 50 V | - | Military | MIL-PRF-19500/503 | Through Hole | G, Axial | -65°C ~ 155°C |
|
JANS1N6640US/TRDIODE GEN PURP 50V 300MA D-5D Microchip Technology |
0 |
|
Таблицы данных |
- | SQ-MELF, D | Tape & Reel (TR) | Active | Standard | 50 V | 300mA | 1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 100 nA @ 50 V | - | Military | MIL-PRF-19500/609 | Surface Mount | D-5D | -65°C ~ 175°C |
|
JANTX1N6080/TRDIODE GP REV 100V 2A G AXIAL Microchip Technology |
0 |
|
- |
- | G, Axial | Tape & Reel (TR) | Active | Standard, Reverse Polarity | 100 V | 2A | 1.5 V @ 37.7 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 10 µA @ 100 V | - | Military | MIL-PRF-19500/503 | Through Hole | G, Axial | -65°C ~ 155°C |
|
JANTXV1N6080DIODE GEN PURP 100V 2A G AXIAL Microchip Technology |
0 |
|
- |
- | G, Axial | Bulk | Active | Standard | 100 V | 2A | 1.5 V @ 37.7 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 10 µA @ 100 V | - | Military | MIL-PRF-19500/503 | Through Hole | G, Axial | -65°C ~ 155°C |
|
JANTXV1N6079DIODE GEN PURP 50V 2A G AXIAL Microchip Technology |
0 |
|
- |
- | G, Axial | Bulk | Active | Standard | 50 V | 2A | 1.5 V @ 37.7 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 10 µA @ 50 V | - | Military | MIL-PRF-19500/503 | Through Hole | G, Axial | -65°C ~ 155°C |
|
1N3663RDIODE GEN PURP REV 400V 35A DO21 Microchip Technology |
0 |
|
Таблицы данных |
- | DO-208AA | Bulk | Active | Standard, Reverse Polarity | 400 V | 35A | 1.1 V @ 35 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 400 V | - | - | - | Press Fit | DO-21 | -65°C ~ 175°C |
|
1N3663DIODE GEN PURP 400V 35A DO21 Microchip Technology |
0 |
|
Таблицы данных |
- | DO-208AA | Bulk | Active | Standard | 400 V | 35A | 1.1 V @ 35 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 400 V | - | - | - | Press Fit | DO-21 | -65°C ~ 175°C |