| Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Напряжение - Обратный постоянный ток (Vr) (макс.) | Ток - Средний выпрямленный (Io) | Напряжение - Прямой (Vf) (макс.) @ If | Скорость | Время обратного восстановления (trr) | Ток - Обратный утечка @ Vr | Емкость @ Vr, F | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка | Рабочая температура - Переход |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTXV1N6626US/TRDIODE GEN PURP 220V 1.75A D-5B Microchip Technology |
0 |
|
- |
- | SQ-MELF, E | Tape & Reel (TR) | Active | Standard | 220 V | 1.75A | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 220 V | 40pF @ 10V, 1MHz | Military | MIL-PRF-19500/590 | Surface Mount | D-5B | -65°C ~ 150°C |
|
JANTXV1N6626U/TRDIODE GP 220V 1.75A SQ-MELF Microchip Technology |
0 |
|
- |
- | SQ-MELF, B | Tape & Reel (TR) | Active | Standard | 220 V | 1.75A | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 2 µA @ 220 V | 40pF @ 10V, 1MHz | Military | MIL-PRF-19500/590 | Surface Mount | B, SQ-MELF | -65°C ~ 150°C |
|
UES1101SM/TRDIODE GEN PURP 50V 2A A SQ-MELF Microchip Technology |
0 |
|
- |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 50 V | 2A | 975 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | - | - | - | - | Surface Mount | A, SQ-MELF | - |
|
JANS1N5811/TRDIODE GEN PURP 150V 6A B AXIAL Microchip Technology |
0 |
|
Таблицы данных |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 150 V | 6A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | - | - | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |
|
UES1306E3DIODE GEN PURP 400V 3A B AXIAL Microchip Technology |
0 |
|
- |
- | B, Axial | Bulk | Active | Standard | 400 V | 3A | 1.25 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 20 µA @ 400 V | - | - | - | Through Hole | B, Axial | -55°C ~ 150°C |
|
JANS1N5811DIODE GEN PURP 150V 6A B AXIAL Microchip Technology |
0 |
|
- |
- | B, Axial | Bulk | Active | Standard | 150 V | 6A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | - | - | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTXV1N4148UBDIODE GEN PURP 75V 200MA UB Microchip Technology |
0 |
|
- |
- | 3-SMD, No Lead | Bulk | Discontinued at Digi-Key | Standard | 75 V | 200mA | 1.2 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 20 ns | 500 nA @ 75 V | 4pF @ 0V, 1MHz | Military | MIL-PRF-19500/116 | Surface Mount | UB | -65°C ~ 200°C |
|
JANTXV1N5807URSDIODE GEN PURP 50V 3A B SQ-MELF Microchip Technology |
0 |
|
Таблицы данных |
- | SQ-MELF, B | Bulk | Active | Standard | 50 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 50 V | 60pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
JANTXV1N5809URSDIODE GEN PURP 100V 3A B SQ-MELF Microchip Technology |
0 |
|
Таблицы данных |
- | SQ-MELF, B | Bulk | Active | Standard | 100 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
JANTXV1N5811URSDIODE GEN PURP 150V 3A B SQ-MELF Microchip Technology |
0 |
|
Таблицы данных |
- | SQ-MELF, B | Bulk | Active | Standard | 150 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 60pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |