| Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Напряжение - Обратный постоянный ток (Vr) (макс.) | Ток - Средний выпрямленный (Io) | Напряжение - Прямой (Vf) (макс.) @ If | Скорость | Время обратного восстановления (trr) | Ток - Обратный утечка @ Vr | Емкость @ Vr, F | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка | Рабочая температура - Переход |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JAN1N4148UB/TRSIGNAL OR COMPUTER DIODE Microchip Technology |
0 |
|
Таблицы данных |
- | 3-SMD, No Lead | Tape & Reel (TR) | Active | Standard | 75 V | 200mA | 1.2 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 20 ns | 500 nA @ 75 V | 4pF @ 0V, 1MHz | Military | MIL-PRF-19500/116 | Surface Mount | UB | -65°C ~ 200°C |
|
JANTXV1N5420USDIODE GEN PURP 600V 3A D-5B Microchip Technology |
0 |
|
Таблицы данных |
- | SQ-MELF, E | Bulk | Active | Standard | 600 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 1 µA @ 600 V | - | Military | MIL-PRF-19500/411 | Surface Mount | D-5B | -65°C ~ 175°C |
|
JANTX1N6630US/TRDIODE GEN PURP 900V 1.4A D-5B Microchip Technology |
0 |
|
- |
- | SQ-MELF, E | Tape & Reel (TR) | Active | Standard | 900 V | 1.4A | 1.4 V @ 1.4 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 2 µA @ 900 V | - | Military | MIL-PRF-19500/590 | Surface Mount | D-5B | -65°C ~ 150°C |
|
1N6700DIODE SCHOTTKY Microchip Technology |
0 |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
JANTXV1N5420US/TRDIODE GEN PURP 600V 3A D-5B Microchip Technology |
0 |
|
- |
- | SQ-MELF, E | Tape & Reel (TR) | Active | Standard | 600 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 1 µA @ 600 V | - | Military | MIL-PRF-19500/411 | Surface Mount | D-5B | -65°C ~ 175°C |
|
JANTXV1N6076DIODE GEN PURP 50V 1.3A E-PAK Microchip Technology |
0 |
|
Таблицы данных |
- | E, Axial | Bulk | Active | Standard | 50 V | 1.3A | 1.76 V @ 18.8 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 1 µA @ 50 V | - | Military | MIL-PRF-19500/503 | Through Hole | E-PAK | -65°C ~ 155°C |
|
JANTXV1N6077DIODE GEN PURP 100V 1.3A E-PAK Microchip Technology |
0 |
|
Таблицы данных |
- | E, Axial | Bulk | Active | Standard | 100 V | 1.3A | 1.76 V @ 18.8 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 1 µA @ 100 V | - | Military | MIL-PRF-19500/503 | Through Hole | E-PAK | -65°C ~ 155°C |
|
JANTX1N4148UBDIODE GEN PURP 75V 200MA UB Microchip Technology |
0 |
|
Таблицы данных |
- | 3-SMD, No Lead | Bulk | Active | Standard | 75 V | 200mA | 1.2 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 20 ns | 500 nA @ 75 V | 4pF @ 0V, 1MHz | Military | MIL-PRF-19500/116 | Surface Mount | UB | -65°C ~ 200°C |
|
JAN1N4148UB2DIODE GEN PURP 75V 200MA UB2 Microchip Technology |
0 |
|
Таблицы данных |
- | 2-SMD, No Lead | Bulk | Active | Standard | 75 V | 200mA | 1.2 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 20 ns | 500 nA @ 75 V | 4pF @ 0V, 1MHz | Military | MIL-PRF-19500/116 | Surface Mount | UB2 | -65°C ~ 200°C |
|
JAN1N4148UB2RDIODE GEN PURP 75V 200MA UB2R Microchip Technology |
0 |
|
Таблицы данных |
- | 2-SMD, No Lead | Bulk | Active | Standard, Reverse Polarity | 75 V | 200mA | 1.2 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 20 ns | 500 nA @ 75 V | 4pF @ 0V, 1MHz | Military | MIL-PRF-19500/116 | Surface Mount | UB2R | -65°C ~ 200°C |