| Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Напряжение - Обратный постоянный ток (Vr) (макс.) | Ток - Средний выпрямленный (Io) | Напряжение - Прямой (Vf) (макс.) @ If | Скорость | Время обратного восстановления (trr) | Ток - Обратный утечка @ Vr | Емкость @ Vr, F | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка | Рабочая температура - Переход |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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JANTX1N3644DIODE GP 1.5KV 250MA S AXIAL Microchip Technology |
0 |
|
Таблицы данных |
- | S, Axial | Bulk | Active | Standard | 1500 V | 250mA | 5 V @ 250 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 5 µA @ 1500 V | - | Military | MIL-PRF-19500/279 | Through Hole | S, Axial | -65°C ~ 175°C |
|
JAN1N6642UB/TRDIODE GEN PURP 75V 300MA UB Microchip Technology |
0 |
|
- |
- | 3-SMD, No Lead | Tape & Reel (TR) | Active | Standard | 75 V | 300mA | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 5 ns | 500 nA @ 75 V | 5pF @ 0V, 1MHz | Military | MIL-PRF-19500/578 | Surface Mount | UB | -65°C ~ 175°C |
|
JANTXV1N6625US/TRDIODE GEN PURP 1.1KV 1A D-5A Microchip Technology |
0 |
|
Таблицы данных |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 1100 V | 1A | 1.75 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 1 µA @ 1100 V | - | Military | MIL-PRF-19500/585 | Surface Mount | D-5A | -65°C ~ 150°C |
|
JANTXV1N6625U/TRDIODE GP 1.1KV 1A A SQ-MELF Microchip Technology |
0 |
|
- |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 1100 V | 1A | 1.75 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 1 µA @ 1100 V | - | Military | MIL-PRF-19500/585 | Surface Mount | A, SQ-MELF | -65°C ~ 150°C |
|
JANTX1N3647/TRDIODE GP REV 2100V 250MA S AXIAL Microchip Technology |
0 |
|
- |
- | S, Axial | Tape & Reel (TR) | Active | Standard | 2100 V | 250mA | 5 V @ 250 mA | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 21000 V | - | Military | MIL-PRF-19500/279 | Through Hole | S, Axial | -65°C ~ 175°C |
|
JANTX1N3647DIODE GP 3KV 250MA S AXIAL Microchip Technology |
0 |
|
Таблицы данных |
- | S, Axial | Bulk | Active | Standard | 3000 V | 250mA | 5 V @ 250 mA | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 3000 V | - | Military | MIL-PRF-19500/279 | Through Hole | S, Axial | -65°C ~ 175°C |
|
JANTX1N6077DIODE GEN PURP 100V 1.3A A-PAK Microchip Technology |
0 |
|
Таблицы данных |
- | A, Axial | Bulk | Active | Standard | 100 V | 1.3A | 1.76 V @ 18.8 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | - | Military | MIL-PRF-19500/503 | Through Hole | A-PAK | -65°C ~ 155°C |
|
JANTX1N6625/TRDIODE GEN PURP 1.1KV 1A Microchip Technology |
0 |
|
- |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 1100 V | 1A | 1.75 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 500 nA @ 1100 V | 10pF @ 10V, 1MHz | Military | MIL-PRF-19500/585 | Through Hole | A, Axial | -65°C ~ 150°C |
|
JANTX1N6076DIODE GEN PURP 50V 1.3A A-PAK Microchip Technology |
0 |
|
Таблицы данных |
- | A, Axial | Bulk | Active | Standard | 50 V | 1.3A | 1.76 V @ 18.8 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 50 V | - | Military | MIL-PRF-19500/503 | Through Hole | A-PAK | -65°C ~ 155°C |
|
JANTX1N6625DIODE GEN PURP 1.1KV 1A AXIAL Microchip Technology |
0 |
|
Таблицы данных |
- | A, Axial | Bulk | Active | Standard | 1100 V | 1A | 1.75 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 500 nA @ 1100 V | 10pF @ 10V, 1MHz | Military | MIL-PRF-19500/585 | Through Hole | A, Axial | -65°C ~ 150°C |