| Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Напряжение - Обратный постоянный ток (Vr) (макс.) | Ток - Средний выпрямленный (Io) | Напряжение - Прямой (Vf) (макс.) @ If | Скорость | Время обратного восстановления (trr) | Ток - Обратный утечка @ Vr | Емкость @ Vr, F | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка | Рабочая температура - Переход |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UES1001DIODE GEN PURP 50V 1A A AXIAL Microchip Technology |
0 |
|
- |
- | A, Axial | Bulk | Active | Standard | 50 V | 1A | 975 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | - | - | - | - | Through Hole | A, Axial | -55°C ~ 175°C |
|
UES1102E3DIODE GEN PURP 100V 2.5A A AXIAL Microchip Technology |
0 |
|
- |
- | Axial | Bulk | Active | Standard | 100 V | 2.5A | 975 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 2 µA @ 100 V | - | - | - | Through Hole | A, Axial | 175°C |
|
UES1101/TRDIODE GEN PURP 50V 2A A AXIAL Microchip Technology |
0 |
|
- |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 50 V | 2A | 975 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | - | - | - | - | Through Hole | A, Axial | -55°C ~ 175°C |
|
JANTXV1N5554USDIODE GEN PURP 1KV 3A D-5B Microchip Technology |
0 |
|
Таблицы данных |
- | SQ-MELF, E | Bulk | Discontinued at Digi-Key | Standard | 1000 V | 3A | 1.3 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 1000 V | - | Military | MIL-PRF-19500/420 | Surface Mount | D-5B | -65°C ~ 175°C |
|
JANHCE1N5809DIODE GEN PURP 100V 3A DIE Microchip Technology |
0 |
|
- |
- | Die | Bulk | Active | Standard | 100 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | - | - | Surface Mount | Die | -65°C ~ 175°C |
|
JANHCE1N5807DIODE GEN PURP 50V 3A DIE Microchip Technology |
0 |
|
- |
- | Die | Bulk | Active | Standard | 50 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 50 V | 60pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | Die | -65°C ~ 175°C |
|
JANHCE1N5811DIODE GEN PURP 150V 3A DIE Microchip Technology |
0 |
|
- |
- | Die | Tape & Reel (TR) | Active | Standard | 150 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 60pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | Die | -65°C ~ 175°C |
|
1N6663/TRDIODE GEN PURP 600V 600MA DO35 Microchip Technology |
0 |
|
Таблицы данных |
- | DO-204AH, DO-35, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 600mA | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 50 nA @ 600 V | - | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
UES1001/TRDIODE GEN PURP 50V 1A A AXIAL Microchip Technology |
0 |
|
- |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 50 V | 1A | 975 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | - | - | - | - | Through Hole | A, Axial | -55°C ~ 175°C |
|
UES1102E3/TRDIODE GEN PURP 100V 2.5A A AXIAL Microchip Technology |
0 |
|
- |
- | Axial | Tape & Reel (TR) | Active | Standard | 100 V | 2.5A | 975 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 2 µA @ 100 V | - | - | - | Through Hole | A, Axial | 175°C |