| Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Напряжение - Обратный постоянный ток (Vr) (макс.) | Ток - Средний выпрямленный (Io) | Напряжение - Прямой (Vf) (макс.) @ If | Скорость | Время обратного восстановления (trr) | Ток - Обратный утечка @ Vr | Емкость @ Vr, F | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка | Рабочая температура - Переход |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N6549DIODE RECT ULT FAST REC A-PKG Microchip Technology |
0 |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
JANTXV1N5552DIODE GEN PURP 600V 5A AXIAL Microchip Technology |
0 |
|
Таблицы данных |
- | B, Axial | Bulk | Active | Standard | 600 V | 5A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 600 V | - | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTXV1N5552/TRDIODE GEN PURP 600V 5A Microchip Technology |
0 |
|
Таблицы данных |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 5A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 600 V | - | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
|
JAN1N5712UR-1DIODE SCHOTTKY 16V 75MA DO213AA Microchip Technology |
0 |
|
- |
- | DO-213AA | Bulk | Active | Schottky | 16 V | 75mA | 1 V @ 35 mA | Small Signal =< 200mA (Io), Any Speed | - | 150 nA @ 16 V | 2pF @ 0V, 1MHz | Military | MIL-PRF-19500/444 | Surface Mount | DO-213AA | -65°C ~ 150°C |
|
|
JAN1N5196DIODE GEN PURP 225V 100MA DO35 Microchip Technology |
0 |
|
- |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 225 V | 100mA | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 1 µA @ 250 V | - | Military | MIL-PRF-19500/118 | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
JANTX1N6624/TRDIODE GEN PURP 990V 1A Microchip Technology |
0 |
|
- |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 990 V | 1A | 1.55 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 500 nA @ 990 V | 10pF @ 10V, 1MHz | Military | MIL-PRF-19500/585 | Through Hole | A, Axial | -65°C ~ 150°C |
|
|
JANTX1N5802USDIODE GEN PURP 50V 1A D-5A Microchip Technology |
0 |
|
Таблицы данных |
- | SQ-MELF, A | Bulk | Active | Standard | 50 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 50 V | 25pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | D-5A | -65°C ~ 175°C |
|
JAN1N5196/TRDIODE GEN PURP 225V 100MA DO35 Microchip Technology |
0 |
|
- |
- | DO-204AH, DO-35, Axial | Tape & Reel (TR) | Active | Standard | 225 V | 100mA | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 1 µA @ 250 V | - | Military | MIL-PRF-19500/118 | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
JAN1N5712UR-1/TRDIODE SCHOTTKY 16V 75MA DO213AA Microchip Technology |
0 |
|
- |
- | DO-213AA | Tape & Reel (TR) | Active | Schottky | 16 V | 75mA | 1 V @ 35 mA | Small Signal =< 200mA (Io), Any Speed | - | 150 nA @ 16 V | 2pF @ 0V, 1MHz | Military | MIL-PRF-19500/444 | Surface Mount | DO-213AA | -65°C ~ 150°C |
|
JANTXV1N5553USDIODE GEN PURP 800V 3A B SQ-MELF Microchip Technology |
0 |
|
- |
- | SQ-MELF, B | Bulk | Active | Standard | 800 V | 3A | 1.3 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | - | - | Military | MIL-PRF-19500/420 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |