| Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Напряжение - Обратный постоянный ток (Vr) (макс.) | Ток - Средний выпрямленный (Io) | Напряжение - Прямой (Vf) (макс.) @ If | Скорость | Время обратного восстановления (trr) | Ток - Обратный утечка @ Vr | Емкость @ Vr, F | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка | Рабочая температура - Переход |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTXV1N5807DIODE GEN PURP 50V 3A AXIAL Microchip Technology |
0 |
|
Таблицы данных |
- | B, Axial | Bulk | Active | Standard | 50 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 50 V | 65pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTXV1N5809DIODE GEN PURP 100V 3A AXIAL Microchip Technology |
0 |
|
Таблицы данных |
- | B, Axial | Bulk | Active | Standard | 100 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 65pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTXV1N5811DIODE GEN PURP 150V 3A AXIAL Microchip Technology |
0 |
|
Таблицы данных |
- | B, Axial | Bulk | Active | Standard | 150 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 65pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTXV1N5620USDIODE GEN PURP 800V 1A A SQ-MELF Microchip Technology |
0 |
|
- |
- | SQ-MELF, A | Bulk | Active | Standard | 800 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | - | - | Military | MIL-PRF-19500/427 | Surface Mount | A, SQ-MELF | -65°C ~ 200°C |
|
JANTXV1N5621USDIODE GEN PURP 800V 1A D-5A Microchip Technology |
0 |
|
Таблицы данных |
- | SQ-MELF, A | Bulk | Discontinued at Digi-Key | Standard | 800 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 500 nA @ 800 V | 20pF @ 12V, 1MHz | Military | MIL-PRF-19500/429 | Surface Mount | D-5A | -65°C ~ 175°C |
|
JANTXV1N5620US/TRDIODE GEN PURP 800V 1A A SQ-MELF Microchip Technology |
0 |
|
- |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 800 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | - | - | Military | MIL-PRF-19500/427 | Surface Mount | A, SQ-MELF | -65°C ~ 200°C |
|
JANTX1N6626/TRDIODE GEN PURP 220V 1.75A Microchip Technology |
0 |
|
- |
- | E, Axial | Tape & Reel (TR) | Active | Standard | 220 V | 1.75A | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 220 V | 40pF @ 10V, 1MHz | Military | MIL-PRF-19500/590 | Through Hole | - | -65°C ~ 150°C |
|
JANTXV1N5811/TRDIODE GEN PURP 150V 3A Microchip Technology |
0 |
|
Таблицы данных |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 150 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 65pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTXV1N5809/TRDIODE GEN PURP 100V 3A Microchip Technology |
0 |
|
Таблицы данных |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 100 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 65pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTXV1N5807/TRDIODE GEN PURP 50V 3A Microchip Technology |
0 |
|
Таблицы данных |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 50 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 50 V | 65pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |