| Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Напряжение - Обратный постоянный ток (Vr) (макс.) | Ток - Средний выпрямленный (Io) | Напряжение - Прямой (Vf) (макс.) @ If | Скорость | Время обратного восстановления (trr) | Ток - Обратный утечка @ Vr | Емкость @ Vr, F | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка | Рабочая температура - Переход |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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JAN1N6621DIODE GEN PURP 440V 2A AXIAL Microchip Technology |
0 |
|
Таблицы данных |
- | A, Axial | Bulk | Active | Standard | 440 V | 2A | 1.6 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 440 V | 10pF @ 10V, 1MHz | Military | MIL-PRF-19500/585 | Through Hole | A, Axial | -65°C ~ 150°C |
|
JAN1N6626DIODE GEN PURP 220V 1.75A AXIAL Microchip Technology |
0 |
|
Таблицы данных |
- | E, Axial | Bulk | Active | Standard | 220 V | 1.75A | 1.35 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 220 V | 40pF @ 10V, 1MHz | Military | MIL-PRF-19500/590 | Through Hole | - | -65°C ~ 150°C |
|
JAN1N6627DIODE GEN PURP 440V 1.75A AXIAL Microchip Technology |
0 |
|
Таблицы данных |
- | E, Axial | Bulk | Active | Standard | 440 V | 1.75A | 1.35 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 440 V | 40pF @ 10V, 1MHz | Military | MIL-PRF-19500/590 | Through Hole | - | -65°C ~ 150°C |
|
JAN1N6623DIODE GEN PURP 800V 1A A-PAK Microchip Technology |
0 |
|
Таблицы данных |
- | A, Axial | Bulk | Active | Standard | 800 V | 1A | 1.55 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 800 V | - | Military | MIL-PRF-19500/585 | Through Hole | A, Axial | -65°C ~ 150°C |
|
JAN1N6624DIODE GEN PURP 900V 1A AXIAL Microchip Technology |
0 |
|
Таблицы данных |
- | A, Axial | Bulk | Active | Standard | 900 V | 1A | 1.55 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 900 V | - | Military | MIL-PRF-19500/585 | Through Hole | A, Axial | -65°C ~ 150°C |
|
JAN1N6625DIODE GEN PURP 1KV 1A AXIAL Microchip Technology |
0 |
|
Таблицы данных |
- | A, Axial | Bulk | Active | Standard | 1000 V | 1A | 1.75 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 1 µA @ 1000 V | - | Military | MIL-PRF-19500/585 | Through Hole | A, Axial | -65°C ~ 150°C |
|
JANTX1N3645DIODE GP 2KV 250MA S AXIAL Microchip Technology |
0 |
|
Таблицы данных |
- | S, Axial | Bulk | Active | Standard | 2000 V | 250mA | 5 V @ 250 mA | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 2000 V | - | Military | MIL-PRF-19500/279 | Through Hole | S, Axial | -65°C ~ 175°C |
|
JAN1N5190DIODE GEN PURP 600V 3A AXIAL Microchip Technology |
0 |
|
Таблицы данных |
- | B, Axial | Bulk | Active | Standard | 600 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 2 µA @ 600 V | - | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
|
1N5711UR-1E3/TRDIODE SCHOTTKY 50V 33MA DO213AA Microchip Technology |
0 |
|
- |
- | DO-213AA | Tape & Reel (TR) | Active | Schottky | 50 V | 33mA | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | - | - | Surface Mount | DO-213AA | -65°C ~ 150°C |
|
UT4020/TRDIODE GEN PURP 200V 4A B Microchip Technology |
0 |
|
- |
- | Axial | Tape & Reel (TR) | Active | Standard | 200 V | 4A | 1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 200 V | - | - | - | Through Hole | B | -195°C ~ 175°C |