| Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Напряжение - Обратный постоянный ток (Vr) (макс.) | Ток - Средний выпрямленный (Io) | Напряжение - Прямой (Vf) (макс.) @ If | Скорость | Время обратного восстановления (trr) | Ток - Обратный утечка @ Vr | Емкость @ Vr, F | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка | Рабочая температура - Переход |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5804US/TRDIODE GEN PURP 100V 1A D-5A Microchip Technology |
0 |
|
Таблицы данных |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 100 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 100 V | 25pF @ 10V, 1MHz | - | - | Surface Mount | D-5A | -65°C ~ 175°C |
|
JAN1N6641US/TRSIGNAL OR COMPUTER DIODE Microchip Technology |
0 |
|
Таблицы данных |
- | SQ-MELF, D | Tape & Reel (TR) | Active | Standard | 50 V | 300mA | 1.1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 5 ns | 100 nA @ 50 V | - | Military | MIL-PRF-19500/609 | Surface Mount | D-5D | -65°C ~ 175°C |
|
JAN1N5819UR-1/TRDIODE SCHOTTKY 45V 1A DO213AB Microchip Technology |
0 |
|
Таблицы данных |
- | DO-213AB, MELF (Glass) | Tape & Reel (TR) | Active | Schottky | 45 V | 1A | 490 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 45 V | 70pF @ 5V, 1MHz | Military | MIL-PRF-19500/586 | Surface Mount | DO-213AB (MELF, LL41) | -65°C ~ 125°C |
|
JANTX1N6640/TRDIODE GEN PURP 50V 300MA Microchip Technology |
0 |
|
- |
- | D, Axial | Tape & Reel (TR) | Active | Standard | 50 V | 300mA | 1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 100 nA @ 50 V | - | Military | MIL-PRF-19500/609 | Through Hole | D-5D | -65°C ~ 175°C |
|
JANTXV1N4942DIODE GEN PURP 200V 1A AXIAL Microchip Technology |
0 |
|
Таблицы данных |
- | A, Axial | Bulk | Active | Standard | 200 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 200 V | 45pF @ 12V, 1MHz | Military | MIL-PRF-19500/359 | Through Hole | A, Axial | -65°C ~ 175°C |
|
1N5418E3DIODE GEN PURP 400V 3A B AXIAL Microchip Technology |
0 |
|
Таблицы данных |
- | B, Axial | Bulk | Active | Standard | 400 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 400 V | - | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
1N5186US/TRUFR,FRR Microchip Technology |
0 |
|
Таблицы данных |
- | SQ-MELF, E | Tape & Reel (TR) | Active | Standard | 100 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 2 µA @ 100 V | - | - | - | Surface Mount | E-MELF | -65°C ~ 175°C |
|
1N5189US/TRUFR,FRR Microchip Technology |
0 |
|
Таблицы данных |
- | SQ-MELF, E | Tape & Reel (TR) | Active | Standard | 500 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 2 µA @ 500 V | - | - | - | Surface Mount | E-MELF | -65°C ~ 175°C |
|
1N5187US/TRUFR,FRR Microchip Technology |
0 |
|
Таблицы данных |
- | SQ-MELF, E | Tape & Reel (TR) | Active | Standard | 200 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 2 µA @ 200 V | - | - | - | Surface Mount | E-MELF | -65°C ~ 175°C |
|
JANTX1N5807USDIODE GEN PURP 50V 3A B SQ-MELF Microchip Technology |
0 |
|
Таблицы данных |
- | SQ-MELF, B | Bulk | Active | Standard | 50 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 50 V | 60pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |