| Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Напряжение - Обратный постоянный ток (Vr) (макс.) | Ток - Средний выпрямленный (Io) | Напряжение - Прямой (Vf) (макс.) @ If | Скорость | Время обратного восстановления (trr) | Ток - Обратный утечка @ Vr | Емкость @ Vr, F | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка | Рабочая температура - Переход |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UT262DIODE GEN PURP 200V 2A A AXIAL Microchip Technology |
0 |
|
- |
- | A, Axial | Bulk | Active | Standard | 200 V | 2A | 1 V @ 900 mA | Standard Recovery >500ns, > 200mA (Io) | - | 2 µA @ 200 V | - | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
UTR11DIODE GEN PURP 100V 1A A AXIAL Microchip Technology |
0 |
|
- |
- | A, Axial | Bulk | Active | Standard | 100 V | 1A | 1.1 V @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 3 µA @ 100 V | 100pF @ 0V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
UTR31DIODE GEN PURP 300V 1A A AXIAL Microchip Technology |
0 |
|
- |
- | A, Axial | Bulk | Active | Standard | 300 V | 1A | 1.1 V @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 3 µA @ 300 V | 70pF @ 0V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
UTR22DIODE GEN PURP 200V 2A A AXIAL Microchip Technology |
0 |
|
- |
- | A, Axial | Bulk | Active | Standard | 200 V | 2A | 1.1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 3 µA @ 200 V | 80pF @ 0V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
UTR12DIODE GEN PURP 100V 2A A AXIAL Microchip Technology |
0 |
|
- |
- | A, Axial | Bulk | Active | Standard | 100 V | 2A | 1.1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 3 µA @ 100 V | 100pF @ 0V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
UTR32DIODE GEN PURP 300V 2A A AXIAL Microchip Technology |
0 |
|
- |
- | A, Axial | Bulk | Active | Standard | 300 V | 2A | 1.1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 3 µA @ 300 V | 70pF @ 0V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
UT261DIODE GEN PURP 100V 2A A AXIAL Microchip Technology |
0 |
|
- |
- | A, Axial | Bulk | Active | Standard | 100 V | 2A | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 2 µA @ 100 V | - | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
UTR51DIODE GEN PURP 500V 1A A AXIAL Microchip Technology |
0 |
|
- |
- | A, Axial | Bulk | Active | Standard | 500 V | 1A | 1.1 V @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 3 µA @ 500 V | 50pF @ 0V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
UT4005DIODE GEN PURP 50V 4A B Microchip Technology |
0 |
|
- |
- | Axial | Bulk | Active | Standard | 50 V | 4A | 1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 50 V | - | - | - | Through Hole | B | -195°C ~ 175°C |
|
UT3010DIODE GEN PURP 100V 3A B Microchip Technology |
0 |
|
- |
- | Axial | Bulk | Active | Standard | 100 V | 3A | 1 V @ 2 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 100 V | - | - | - | Through Hole | B | -195°C ~ 175°C |