| Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Напряжение - Обратный постоянный ток (Vr) (макс.) | Ток - Средний выпрямленный (Io) | Напряжение - Прямой (Vf) (макс.) @ If | Скорость | Время обратного восстановления (trr) | Ток - Обратный утечка @ Vr | Емкость @ Vr, F | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка | Рабочая температура - Переход |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5809E3/TRDIODE GEN PURP 100V 6A B AXIAL Microchip Technology |
0 |
|
Таблицы данных |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 100 V | 6A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | - | - | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
1N5551USE3DIODE GEN PURP 400V 3A B SQ-MELF Microchip Technology |
0 |
|
Таблицы данных |
- | SQ-MELF, B | Bulk | Active | Standard | 400 V | 3A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 400 V | - | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
1N5811E3/TRDIODE GEN PURP 150V 3A B AXIAL Microchip Technology |
0 |
|
Таблицы данных |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 150 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 60pF @ 10V, 1MHz | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTX1N5415DIODE GEN PURP 50V 3A AXIAL Microchip Technology |
0 |
|
Таблицы данных |
- | B, Axial | Bulk | Active | Standard | 50 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 50 V | - | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTX1N5811/TRDIODE GEN PURP 150V 3A B AXIAL Microchip Technology |
0 |
|
Таблицы данных |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 150 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 60pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |
|
JAN1N5802/TRDIODE GEN PURP 50V 2.5A Microchip Technology |
0 |
|
Таблицы данных |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 50 V | 2.5A | 975 mV @ 2.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 50 V | 25pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Through Hole | A, Axial | -65°C ~ 175°C |
|
JANTX1N5616USDIODE GEN PURP 400V 1A D-5A Microchip Technology |
0 |
|
Таблицы данных |
- | SQ-MELF, A | Bulk | Active | Standard | 400 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 400 V | - | Military | MIL-PRF-19500/427 | Surface Mount | D-5A | -65°C ~ 200°C |
|
JAN1N5186DIODE GEN PURP 100V 3A B AXIAL Microchip Technology |
0 |
|
Таблицы данных |
- | B, Axial | Bulk | Active | Standard | 120 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 2 µA @ 100 V | - | Military | MIL-PRF-19500/424 | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTX1N4249/TRDIODE GEN PURP 1KV 1A Microchip Technology |
0 |
|
- |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 1000 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 1 V | - | Military | MIL-PRF-19500/286 | Through Hole | A, Axial | -65°C ~ 175°C |
|
1N5552US/TRDIODE GEN PURP 600V 3A D-5B Microchip Technology |
0 |
|
Таблицы данных |
- | SQ-MELF, E | Tape & Reel (TR) | Active | Standard | 600 V | 3A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 600 V | - | - | - | Surface Mount | D-5B | -65°C ~ 175°C |