| Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Напряжение - Обратный постоянный ток (Vr) (макс.) | Ток - Средний выпрямленный (Io) | Напряжение - Прямой (Vf) (макс.) @ If | Скорость | Время обратного восстановления (trr) | Ток - Обратный утечка @ Vr | Емкость @ Vr, F | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка | Рабочая температура - Переход |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JAN1N4248/TRDIODE GEN PURP 800V 1A Microchip Technology |
0 |
|
- |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 800 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 800 V | - | Military | MIL-PRF-19500/286 | Through Hole | A, Axial | -65°C ~ 175°C |
|
JANTX1N3614/TRDIODE GEN PURP 800V 1A Microchip Technology |
0 |
|
- |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 800 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 800 V | - | Military | MIL-PRF-19500/228 | Through Hole | A, Axial | -65°C ~ 175°C |
|
|
CDLL1A60DIODE SCHOTTKY 60V 1A DO213AB Microchip Technology |
0 |
|
Таблицы данных |
- | DO-213AB, MELF | Bulk | Active | Schottky | 60 V | 1A | 690 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 60 V | 0.9pF @ 5V, 1MHz | - | - | Surface Mount | DO-213AB | - |
|
JANTXV1N914URDIODE GEN PURP 75V 200MA DO213AA Microchip Technology |
0 |
|
Таблицы данных |
- | DO-213AA | Bulk | Discontinued at Digi-Key | Standard | 75 V | 200mA | 1.2 V @ 50 mA | Small Signal =< 200mA (Io), Any Speed | 20 ns | 500 nA @ 75 V | 2.8pF @ 1.5V, 1MHz | Military | MIL-PRF-19500/116 | Surface Mount | DO-213AA | -65°C ~ 175°C |
|
JANTX1N5615/TRDIODE GEN PURP 200V 1A A-PAK Microchip Technology |
0 |
|
- |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 200 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 200 V | 45pF @ 12V, 1MHz | Military | MIL-PRF-19500/429 | Through Hole | A, Axial | -65°C ~ 175°C |
|
1N4942E3/TRDIODE GEN PURP 200V 1A Microchip Technology |
0 |
|
- |
- | Axial | Tape & Reel (TR) | Active | Standard | 200 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 200 V | 45pF @ 12V, 1MHz | - | - | Through Hole | - | -65°C ~ 175°C |
|
JANTX1N3613DIODE GEN PURP 600V 1A AXIAL Microchip Technology |
0 |
|
Таблицы данных |
- | A, Axial | Bulk | Active | Standard | 600 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 600 V | - | Military | MIL-PRF-19500/228 | Through Hole | A, Axial | -65°C ~ 175°C |
|
JAN1N5620/TRDIODE GEN PURP 800V 1A Microchip Technology |
0 |
|
- |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 800 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 800 V | - | Military | MIL-PRF-19500/427 | Through Hole | A, Axial | -65°C ~ 200°C |
|
JANTX1N4942/TRDIODE GEN PURP 200V 1A A AXIAL Microchip Technology |
0 |
|
Таблицы данных |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 200 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 200 V | - | Military | MIL-PRF-19500/359 | Through Hole | A, Axial | -65°C ~ 175°C |
|
1N5619E3DIODE GEN PURP 600V 1A A AXIAL Microchip Technology |
0 |
|
- |
- | A, Axial | Bulk | Active | Standard | 600 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 400 V | 25pF @ 12V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 200°C |