Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип IGBT | Конфигурация | Напряжение - Коллектор-Эмиттер Пробой (Макс.) | Ток - Коллектор (Ic) (Макс.) | Мощность - макс. | Vce(on) (макс.) @ Vge, Ic | Ток - Коллектор Отсечка (Макс.) | Входная емкость (Cies) @ Vce | Вход | NTC термистор | Рабочая температура | Тип крепления | Устройство поставщика Упаковка |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-GT75YF120UTECONO - 4 PACK IGBT Vishay General Semiconductor - Diodes Division |
107 |
|
- |
- | Module | Box | Active | Trench Field Stop | Full Bridge | 1200 V | 118 A | 431 W | 2.6V @ 15V, 75A | 100 µA | - | Standard | Yes | -40°C ~ 150°C (TJ) | Chassis Mount | - |
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VS-GT90DA120USOT-227 - SINGLE SWITCH IGBT + A Vishay General Semiconductor - Diodes Division |
51 |
|
- |
- | SOT-227-4, miniBLOC | Tube | Active | Trench Field Stop | Single | 1200 V | 169 A | 781 W | 2.6V @ 15V, 75A | 100 µA | - | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227 |
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VS-ENV020F65UPOWER MODULE Vishay General Semiconductor - Diodes Division |
9 |
|
- |
* | - | Box | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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VS-ENV020M120MPOWER MODULE Vishay General Semiconductor - Diodes Division |
9 |
|
- |
* | - | Box | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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VS-ENM040M60PPOWER MODULE Vishay General Semiconductor - Diodes Division |
5 |
|
- |
* | - | Box | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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VS-ENK025C65SPOWER MODULE Vishay General Semiconductor - Diodes Division |
8 |
|
- |
* | - | Box | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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VS-ENW30S120TPOWER MODULE Vishay General Semiconductor - Diodes Division |
8 |
|
- |
* | - | Box | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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VS-GT100TS065NMODULES IGBT - IAP IGBT Vishay General Semiconductor - Diodes Division |
8 |
|
- |
- | Module | Box | Active | Trench Field Stop | Half Bridge Inverter | 650 V | 96 A | 259 W | 2.3V @ 15V, 100A | 50 µA | - | Standard | No | -40°C ~ 175°C (TJ) | Chassis Mount | INT-A-PAK IGBT |
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VS-GT100TS065SMODULES IGBT - IAP IGBT Vishay General Semiconductor - Diodes Division |
15 |
|
- |
FRED Pt® | Module | Box | Active | Trench | Half Bridge Inverter | 650 V | 247 A | 517 W | 1.32V @ 15V, 100A | 100 µA | - | Standard | No | -40°C ~ 175°C (TJ) | Chassis Mount | INT-A-PAK IGBT |
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VS-GT150TS065SMODULES IGBT - IAP IGBT Vishay General Semiconductor - Diodes Division |
15 |
|
- |
FRED Pt® | Module | Box | Active | Trench | Half Bridge Inverter | 650 V | 372 A | 789 W | 1.32V @ 15V, 150A | 150 µA | - | Standard | No | -40°C ~ 175°C (TJ) | Chassis Mount | INT-A-PAK IGBT |