БОМ
FET, MOSFET
| Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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LSIC1MO120G0040MOSFET SIC 1200V 50A TO247-4L |
0 |
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Таблицы данных |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 70A (Tc) | 20V | 50mOhm @ 40A, 20V | 4V @ 20mA | 175 nC @ 20 V | +22V, -6V | 317 pF @ 800 V | - | 357W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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IXFK48N60PMOSFET N-CH 600V 48A TO264AA |
0 |
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Таблицы данных |
HiPerFET™, Polar | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 48A (Tc) | 10V | 135mOhm @ 500mA, 10V | 5V @ 8mA | 150 nC @ 10 V | ±30V | 8860 pF @ 25 V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
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IXTK32P60PMOSFET P-CH 600V 32A TO264 |
0 |
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Таблицы данных |
PolarP™ | TO-264-3, TO-264AA | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 600 V | 32A (Tc) | 10V | 350mOhm @ 16A, 10V | 4V @ 1mA | 196 nC @ 10 V | ±20V | 11100 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 (IXTK) |
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IXFR64N50Q3MOSFET N-CH 500V 45A ISOPLUS247 |
1 |
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Таблицы данных |
HiPerFET™, Q3 Class | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 45A (Tc) | 10V | 95mOhm @ 32A, 10V | 6.5V @ 4mA | 145 nC @ 10 V | ±30V | 6950 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
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IXFR64N60PMOSFET N-CH 600V 36A ISOPLUS247 |
0 |
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Таблицы данных |
HiPerFET™, Polar | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 105mOhm @ 32A, 10V | 5V @ 8mA | 200 nC @ 10 V | ±30V | 12000 pF @ 25 V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
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IXFX80N50Q3MOSFET N-CH 500V 80A PLUS247-3 |
0 |
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Таблицы данных |
HiPerFET™, Q3 Class | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 80A (Tc) | 10V | 65mOhm @ 40A, 10V | 6.5V @ 8mA | 200 nC @ 10 V | ±30V | 10000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
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IXFK80N50Q3MOSFET N-CH 500V 80A TO264AA |
1 |
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Таблицы данных |
HiPerFET™, Q3 Class | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 80A (Tc) | 10V | 65mOhm @ 40A, 10V | 6.5V @ 8mA | 200 nC @ 10 V | ±30V | 10000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
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SCTW90N65G2VSICFET N-CH 650V 90A HIP247 |
0 |
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Таблицы данных |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 90A (Tc) | 18V | 25mOhm @ 50A, 18V | 5V @ 250µA | 157 nC @ 18 V | +22V, -10V | 3300 pF @ 400 V | - | 390W (Tc) | -55°C ~ 200°C (TJ) | - | - | Through Hole | HiP247™ |
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SCTWA90N65G2V-4TRANS SJT N-CH 650V 119A HIP247 |
0 |
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Таблицы данных |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 119A (Tc) | - | 24mOhm @ 50A, 18V | 5V @ 1mA | 157 nC @ 18 V | +22V, -10V | 3380 pF @ 400 V | - | 565W (Tc) | -55°C ~ 200°C (TJ) | - | - | Through Hole | HiP247™ Long Leads |
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IXFT32N100XHVMOSFET N-CH 1000V 32A TO268HV |
0 |
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Таблицы данных |
HiPerFET™, Ultra X | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 32A (Tc) | 10V | 220mOhm @ 16A, 10V | 6V @ 4mA | 130 nC @ 10 V | ±30V | 4075 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268HV (IXFT) |
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IXFX52N100XMOSFET N-CH 1000V 52A PLUS247 |
0 |
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Таблицы данных |
HiPerFET™, Ultra X | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 52A (Tc) | 10V | 125mOhm @ 26A, 10V | 6V @ 4mA | 245 nC @ 10 V | ±30V | 6725 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
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IXFR15N100Q3MOSFET N-CH 1000V 10A ISOPLUS247 |
0 |
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Таблицы данных |
HiPerFET™, Q3 Class | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 10A (Tc) | 10V | 1.2Ohm @ 7.5A, 10V | 6.5V @ 4mA | 64 nC @ 10 V | ±30V | 3250 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
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IXFX94N50P2MOSFET N-CH 500V 94A PLUS247-3 |
0 |
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Таблицы данных |
HiPerFET™, PolarP2™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 94A (Tc) | 10V | 55mOhm @ 500mA, 10V | 5V @ 8mA | 220 nC @ 10 V | ±30V | 13700 pF @ 25 V | - | 1300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
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STY105NM50NMOSFET N-CH 500V 110A MAX247 |
0 |
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Таблицы данных |
MDmesh™ II | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 110A (Tc) | 10V | 22mOhm @ 52A, 10V | 4V @ 250µA | 326 nC @ 10 V | ±25V | 9600 pF @ 100 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | MAX247™ |
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IXFB90N85XMOSFET N-CH 850V 90A PLUS264 |
0 |
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Таблицы данных |
HiPerFET™, Ultra X | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 850 V | 90A (Tc) | 10V | 41mOhm @ 500mA, 10V | 5.5V @ 8mA | 340 nC @ 10 V | ±30V | 13300 pF @ 25 V | - | 1785W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS264™ |
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IXFB62N80Q3MOSFET N-CH 800V 62A PLUS264 |
0 |
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Таблицы данных |
HiPerFET™, Q3 Class | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 62A (Tc) | 10V | 140mOhm @ 31A, 10V | 6.5V @ 8mA | 270 nC @ 10 V | ±30V | 13600 pF @ 25 V | - | 1560W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS264™ |
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IXTN550N055T2MOSFET N-CH 55V 550A SOT227B |
0 |
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Таблицы данных |
TrenchT2™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 550A (Tc) | 10V | 1.3mOhm @ 100A, 10V | 4V @ 250µA | 595 nC @ 10 V | ±20V | 40000 pF @ 25 V | - | 940W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IXFK27N80QMOSFET N-CH 800V 27A TO264AA |
0 |
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Таблицы данных |
HiPerFET™, Q Class | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 27A (Tc) | 10V | 320mOhm @ 500mA, 10V | 4.5V @ 4mA | 170 nC @ 10 V | ±20V | 7600 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
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LSIC1MO120G0025MOSFET SIC 1200V 70A TO247-4L |
0 |
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Таблицы данных |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 20V | 32mOhm @ 50A, 20V | 4V @ 30mA | 265 nC @ 20 V | +22V, -6V | 495 pF @ 800 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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IXFB44N100Q3MOSFET N-CH 1000V 44A PLUS264 |
0 |
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Таблицы данных |
HiPerFET™, Q3 Class | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 44A (Tc) | 10V | 220mOhm @ 22A, 10V | 6.5V @ 8mA | 264 nC @ 10 V | ±30V | 13600 pF @ 25 V | - | 1560W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS264™ |
