БОМ
FET, MOSFET
| Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT50M65JLLMOSFET N-CH 500V 58A ISOTOP |
20 |
|
Таблицы данных |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 10V | 65mOhm @ 29A, 10V | 5V @ 2.5mA | 141 nC @ 10 V | ±30V | 7010 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
MSC40SM120JCU3SICFET N-CH 1.2KV 55A SOT227 |
66 |
|
Таблицы данных |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.7V @ 1mA | 137 nC @ 20 V | +25V, -10V | 1990 pF @ 1000 V | - | 245W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 (ISOTOP®) |
|
MSC017SMA120JMOSFET SIC 1200V 17 MOHM SOT-227 |
17 |
|
Таблицы данных |
- | - | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 88A (Tc) | 20V | 22mOhm @ 40A, 20V | 2.7V @ 4.5mA (Typ) | 249 nC @ 20 V | +23V, -10V | 5280 pF @ 1000 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | - | - | - | SOT-227 |
|
TW015N65C,S1FG3 650V SIC-MOSFET TO-247 15MOH |
52 |
|
Таблицы данных |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 100A (Tc) | 18V | 21mOhm @ 50A, 18V | 5V @ 11.7mA | 128 nC @ 18 V | +25V, -10V | 4850 pF @ 400 V | - | 342W (Tc) | 175°C | - | - | Through Hole | TO-247 |
|
MSC100SM70JCU3SICFET N-CH 700V 124A SOT227 |
14 |
|
Таблицы данных |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 124A (Tc) | 20V | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215 nC @ 20 V | +25V, -10V | 4500 pF @ 700 V | - | 365W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 (ISOTOP®) |
|
|
MSC70SM120JCU2SICFET N-CH 1.2KV 89A SOT227 |
24 |
|
Таблицы данных |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 89A (Tc) | 20V | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232 nC @ 20 V | +25V, -10V | 3020 pF @ 1000 V | - | 395W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 (ISOTOP®) |
|
APT50M50JVFRMOSFET N-CH 500V 77A ISOTOP |
6 |
|
Таблицы данных |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 77A (Tc) | - | 50mOhm @ 500mA, 10V | 4V @ 5mA | 1000 nC @ 10 V | - | 19600 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
|
|
MSC130SM120JCU3SICFET N-CH 1.2KV 173A SOT227 |
18 |
|
Таблицы данных |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 173A (Tc) | 20V | 16mOhm @ 80A, 20V | 2.8V @ 2mA | 464 nC @ 20 V | +25V, -10V | 6040 pF @ 1000 V | - | 745W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 (ISOTOP®) |
|
IXFN70N120SKSICFET N-CH 1200V 68A SOT227B |
10 |
|
Таблицы данных |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 68A (Tc) | 20V | 34mOhm @ 50A, 20V | 4V @ 15mA | 161 nC @ 20 V | +20V, -5V | 2790 pF @ 1000 V | - | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
MSCSM120DAM31CTBL1NGPM-MOSFET-SIC-SBD-BL1 |
23 |
|
Таблицы данных |
- | Module | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 79A | 20V | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232 nC @ 20 V | +25V, -10V | 3020 pF @ 1000 V | - | 310W | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
|
EPC7014UBSHGAN FET HEMT 60V 1A 4UB |
11 |
|
Таблицы данных |
e-GaN® | 4-SMD, No Lead | Bulk | Active | N-Channel | GaNFET (Gallium Nitride) | 60 V | 1A (Tc) | 5V | 580mOhm @ 1A, 5V | 2.5V @ 140µA | - | - | 22 pF @ 30 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-SMD |
|
|
FBG04N30BSHGAN FET HEMT 40V 30A 4FSMD-B |
13 |
|
Таблицы данных |
e-GaN® | 4-SMD, No Lead | Bulk | Active | N-Channel | GaNFET (Gallium Nitride) | 40 V | 30A (Tc) | 5V | 9mOhm @ 30A, 5V | 2.5V @ 9mA | 11.4 nC @ 5 V | +6V, -4V | 1300 pF @ 20 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-SMD |
|
|
BSM180C12P3C202SICFET N-CH 1200V 180A MODULE |
9 |
|
Таблицы данных |
- | Module | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 180A (Tc) | - | - | 5.6V @ 50mA | - | +22V, -4V | 9000 pF @ 10 V | - | 880W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
|
|
TSM2N7002AKCU RFG60V, 0.24A, SINGLE N-CHANNEL POW |
130 |
|
Таблицы данных |
- | SC-70, SOT-323 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 240mA (Ta) | 4.5V, 10V | 2.5Ohm @ 240mA, 10V | 2.5V @ 250µA | 0.68 nC @ 4.5 V | ±20V | 30 pF @ 30 V | - | 298mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-323 |
|
ISP20EP10LMXTSA1SMALL SIGNAL MOSFETS PG-SOT223-4 |
1,000 |
|
Таблицы данных |
OptiMOS™ | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 650mA (Ta), 990mA (Tc) | 4.5V, 10V | 2Ohm @ 600mA, 10V | 2V @ 78µA | 3.5 nC @ 10 V | ±20V | 170 pF @ 50 V | - | 1.8W (Ta), 4.2W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
|
NVJS4405NT1GMOSFET N-CH 25V 1A SC88 |
687 |
|
Таблицы данных |
- | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 1A (Ta) | 2.7V, 4.5V | 350mOhm @ 600mA, 4.5V | 1.5V @ 250µA | 1.5 nC @ 4.5 V | ±8V | 60 pF @ 10 V | - | 630mW (Ta) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | SC-88/SC70-6/SOT-363 |
|
DMP2067LVT-7MOSFET P-CH 20V 4.2A TSOT26 |
420 |
|
Таблицы данных |
- | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.2A (Ta) | 2.5V, 4.5V | 45mOhm @ 4.5A, 4.5V | 1.5V @ 250µA | 28 nC @ 8 V | ±8V | 1575 pF @ 10 V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TSOT-26 |
|
SSM6K404TU,LFMOSFET N-CH 20V 3A UF6 |
37 |
|
Таблицы данных |
- | 6-SMD, Flat Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 3A (Ta) | 1.5V, 4V | 55mOhm @ 2A, 4V | 1V @ 1mA | 5.9 nC @ 4 V | ±10V | 400 pF @ 10 V | - | 500mW (Ta) | 150°C | - | - | Surface Mount | UF6 |
|
SI1480DH-T1-GE3MOSFET N-CH 100V 2.6A SC70-6 |
955 |
|
Таблицы данных |
TrenchFET® | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 2.6A (Tc) | 4.5V, 10V | 200mOhm @ 1.9A, 10V | 3V @ 250µA | 5 nC @ 10 V | ±20V | 130 pF @ 50 V | - | 1.5W (Ta), 2.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SC-70-6 |
|
MCH6353-TL-WMOSFET P-CH 12V 6A 6MCPH |
636 |
|
Таблицы данных |
- | 6-SMD, Flat Leads | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 6A (Ta) | 1.5V, 4.5V | 35mOhm @ 3A, 4.5V | - | 12 nC @ 4.5 V | ±10V | 1250 pF @ 6 V | - | 1.4W (Ta) | 150°C (TJ) | - | - | Surface Mount | 6-MCPH |
