БОМ
FET, MOSFET
| Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GS65R030Q4ASiC MOSFET N-CH 650V 70A TO-247 |
5,000 |
|
Таблицы данных |
TrenchFET® | TO-247-4 | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
|
GS65R045Q4ASiC MOSFET N-CH 650V 51A TO-247 |
5,000 |
|
Таблицы данных |
TrenchFET® | TO-247-4 | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
MT9M131C12STC-MI-DRCMOS IMAGE SENSOR SYSTEM-ON-CHIP |
3,040 |
|
Таблицы данных |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
AC3M0015065KSIC MOSFET N-CH 650V 122A TO247- |
10,000 |
|
Таблицы данных |
* | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 122A (Tc) | 15V | 21mOhm @ 55.8A, 15V | 3.6V @ 15.5mA | - | +19V, -8V | - | - | 416W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
AC3M0015065DSIC MOSFET N-CH 650V 122A TO247- |
10,000 |
|
Таблицы данных |
* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 122A (Tc) | 15V | 21mOhm @ 55.8A, 15V | 3.6V @ 15.5mA | - | +19V, -8V | - | - | 416W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
GS120R033Q4ASiC MOSFET N-CH 1200V 69A TO-24 |
5,000 |
|
Таблицы данных |
TrenchFET® | TO-247-4 | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
|
GS120R040Q4SiC MOSFET N-CH 1200V 50A TO-24 |
5,000 |
|
Таблицы данных |
TrenchFET® | TO-247-4 | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-247-4L |
|
|
FF06030QSICFET N-CH 650V 65A TO-247-4L |
300 |
|
- |
Falcon | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 65A (Tc) | 18V | 45mOhm @ 30A, 18V | 2.2V @ 40mA | 125 nC @ 15 V | +18V, -8V | 3015 pF @ 400 V | - | 202W (Tc) | -55°C ~ 175°C (TJ) | - | - | - | TO-247-4L |
|
|
FF06030J-7ASICFET N-CH 650V 74A TO-263-7L |
300 |
|
Таблицы данных |
Falcon | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 74A (Tc) | 18V | 45mOhm @ 30A, 18V | 2.5V @ 40mA | 125 nC @ 15 V | 18V | 3015 pF @ 400 V | - | 268W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK-7L |
|
|
FF06030FASICFET N-CH 650V 74A TOLL |
300 |
|
Таблицы данных |
Falcon | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 74A (Tc) | 18V | 45mOhm @ 30A, 18V | 2.5V @ 40mA | 125 nC @ 15 V | 18V | 3015 pF @ 400 V | - | 268W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TOLL |
|
|
FF06030J-7SICFET N-CH 650V 62A TO-263-7L |
300 |
|
Таблицы данных |
Falcon | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 62A (Tc) | 15V, 18V | 45mOhm @ 30A, 18V | 2.5V @ 40mA (Typ) | 125 nC @ 400 V | +18V, -8V | 3015 pF @ 400 V | - | 187W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7L |
|
|
FF07035FASICFET N-CH 750V 61A TOLL |
300 |
|
- |
Falcon | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 750 V | 61A (Tc) | 18V | 48mOhm @ 22A, 18V | 2.5V @ 40mA | 112 nC @ 15 V | +18V, -8V | 2818 pF @ 500 V | - | 267W (Tc) | -55°C ~ 175°C (TJ) | - | - | - | TOLL |
|
|
FF07035J-7ASICFET N-CH 750V 61A TO-263-7L |
300 |
|
- |
Falcon | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 750 V | 61A (Tc) | 18V | 48mOhm @ 22A, 18V | 2.5V @ 40mA | 112 nC @ 15 V | +18V, -8V | 2818 pF @ 500 V | - | 267W (Tc) | -55°C ~ 175°C (TJ) | - | - | - | TO-263-7L |
|
|
FF07035QASICFET N-CH 750V 62A TO-247-4L |
300 |
|
- |
Falcon | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 750 V | 62A (Tc) | 18V | 48mOhm @ 22A, 18V | 2.5V @ 40mA | 112 nC @ 15 V | +18V, -8V | 2818 pF @ 500 V | - | 277W (Tc) | -55°C ~ 175°C (TJ) | - | - | - | TO-247-4L |
|
|
FF06030QASICFET N-CH 650V 75A TO-247-4L |
300 |
|
- |
Falcon | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 75A (Tc) | 18V | 45mOhm @ 30A, 18V | 2.5V @ 40mA | 125 nC @ 15 V | +18V, -8V | 3015 pF @ 400 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | - | TO-247-4L |
|
|
FF07035E-3ASICFET N-CH 750V 62A TO-247-3L |
300 |
|
- |
Falcon | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 750 V | 62A (Tc) | 18V | 48mOhm @ 22A, 18V | 2.5V @ 40mA | 112 nC @ 15 V | +18V, -8V | 2818 pF @ 500 V | - | 277W (Tc) | -55°C ~ 175°C (TJ) | - | - | - | TO-247-3L |
|
|
FF06030E-3ASICFET N-CH 650V 75A TO-247-3L |
300 |
|
Таблицы данных |
Falcon | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 75A (Tc) | 15V, 18V | 45mOhm @ 30A, 18V | 2.2V @ 40mA (Typ) | 125 nC @ 400 V | +18V, -8V | 3015 pF @ 400 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3L |
|
|
FF12040QASICFET N-CH 1200V 54A TO-247-4L |
300 |
|
- |
Falcon | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 54A (Tc) | 18V | 56mOhm @ 20A, 18V | 2.2V @ 40mA | 117 nC @ 15 V | +18V, -8V | 3129 pF @ 800 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | - | - | - | TO-247-4L |
|
|
AC3M0016120KSIC MOSFET N-CH 1200V 117A TO247 |
10,000 |
|
Таблицы данных |
* | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 117A (Tc) | 15V | 22.3mOhm @ 75A, 15V | 3.6V @ 23mA | - | +19V, -8V | - | - | 556W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
AC3M0016120DSIC MOSFET N-CH 1200V 117A TO247 |
10,000 |
|
Таблицы данных |
* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 117A (Tc) | 15V | 22.3mOhm @ 75A, 15V | 3.6V @ 23mA | - | +19V, -8V | - | - | 556W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
