БОМ
FET, MOSFET
| Фотографии | Производитель. Часть # | Доступность | Количество | Таблицы данных | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AOM065V120X2Q1200V SILICON CARBIDE MOSFET |
238 |
|
Таблицы данных |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40.3A (Tc) | 15V | 85mOhm @ 10A, 15V | 3.5V @ 10mA | 62.3 nC @ 15 V | +15V, -5V | 1716 pF @ 800 V | - | 187.5W (Ta) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
|
S3M0040120KMOSFET SILICON CARBIDE SIC 1200V |
300 |
|
Таблицы данных |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 65A (Tc) | 18V | 52mOhm @ 40A, 18V | 4V @ 16mA | 143 nC @ 18 V | +22V, -8V | 2844 pF @ 1000 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
C3M0075120K1MOSFET N-CH 1200V 32A TO247-4L |
345 |
|
Таблицы данных |
- | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 32A (Tc) | 15V | 97.5mOhm @ 17.9A, 15V | 3.8V @ 5mA | 55 nC @ 15 V | +19V, -8V | 1480 pF @ 1000 V | - | 145W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
|
SICW080N120Y4-BPN-CHANNEL MOSFET,TO-247-4 |
338 |
|
Таблицы данных |
- | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 39A | 18V | 85mOhm @ 20A, 18V | 3.6V @ 5mA | 41 nC @ 18 V | +22V, -8V | 890 pF @ 1000 V | - | 223W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
NVH4L032N065M3SSIC MOS TO247-4L 32MOHM 650V M3S |
422 |
|
- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 50A (Tc) | 15V, 18V | 44mOhm @ 15A, 18V | 4V @ 7.5mA | 55 nC @ 18 V | +22V, -8V | 1410 pF @ 400 V | - | 187W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
|
|
IMDQ75R027M1HXUMA1IMDQ75R027M1HXUMA1 |
708 |
|
Таблицы данных |
CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 64A (Tj) | 15V, 20V | 25mOhm @ 24.5A, 20V | 5.6V @ 8.8mA | 49 nC @ 18 V | +20V, -2V | 1668 pF @ 500 V | - | 273W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
|
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NVH4L070N120M3SSILICON CARBIDE (SIC) MOSFET-ELI |
222 |
|
Таблицы данных |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 34A (Tc) | 18V | 87mOhm @ 15A, 18V | 4.4V @ 7mA | 57 nC @ 18 V | +22V, -10V | 1230 pF @ 800 V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
|
PJMK040N60EC_T0_00201600V/ 40M / 71A/ EASY TO DRIVER |
690 |
|
Таблицы данных |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
AOK065V65X2MOSFET N-CH 650V 40.3A TO247 |
225 |
|
Таблицы данных |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 40.3A (Tc) | 15V | 85mOhm @ 10A, 15V | 3.5V @ 10mA | 58.8 nC @ 15 V | +15V, -5V | 1762 pF @ 400 V | - | 187.5W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
|
|
DIW170SIC070SIC MOSFET, TO-247-3L, N, 70A, 1 |
150 |
|
Таблицы данных |
- | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1700 V | 70A (Tc) | 20V | 22.3mOhm @ 40A, 20V | 4V @ 10mA | 80 nC @ 18 V | +20V, -5V | 6000 pF @ 1200 V | - | 416W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
|
|
IPQC60R017S7XTMA1MOSFET |
750 |
|
Таблицы данных |
CoolMOS™ S7 | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 12V | 17mOhm @ 29A, 12V | 4.5V @ 1.89mA | 196 nC @ 12 V | ±20V | 7370 pF @ 300 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22 |
|
|
IPDQ60R017S7XTMA1MOSFET |
695 |
|
Таблицы данных |
CoolMOS™ S7 | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 12V | 17mOhm @ 29A, 12V | 4.5V @ 1.89mA | 196 nC @ 12 V | ±20V | 7370 pF @ 300 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
|
|
SIHG64N65E-GE3MOSFET N-CH 650V 64A TO247AC |
481 |
|
Таблицы данных |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 64A (Tc) | 10V | 47mOhm @ 32A, 10V | 4V @ 250µA | 369 nC @ 10 V | ±30V | 7497 pF @ 100 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
|
SCT4026DWATL750V, 51A, 7-PIN SMD, TRENCH-STR |
946 |
|
Таблицы данных |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 51A (Tc) | 18V | 34mOhm @ 29A, 18V | 4.8V @ 15.4mA | 94 nC @ 18 V | +21V, -4V | 2320 pF @ 500 V | - | - | 175°C (TJ) | - | - | Surface Mount | TO-263-7LA |
|
|
AIMBG75R027M1HXTMA1AIMBG75R027M1HXTMA1 |
1,183 |
|
- |
CoolSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 64A (Tj) | 15V, 20V | 25mOhm @ 24.5A, 20V | 5.6V @ 8.8mA | 49 nC @ 18 V | +23V, -5V | 1668 pF @ 500 V | - | 273W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7 |
|
|
AOK065V120X2Q1200V SILICON CARBIDE MOSFET |
240 |
|
Таблицы данных |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40.3A (Tc) | 15V | 85mOhm @ 10A, 15V | 3.5V @ 10mA | 62.3 nC @ 15 V | +15V, -5V | 1716 pF @ 800 V | - | 187.5W (Tj) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247 |
|
NVH4L040N65S3FMOSFET N-CH 650V 65A TO247-4 |
448 |
|
Таблицы данных |
SuperFET® III, FRFET® | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 65A (Tc) | - | 40mOhm @ 32.5A, 10V | 5V @ 2.1mA | 160 nC @ 10 V | ±30V | 5665 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
|
G3F40MT12J-TR1200V 40M TO-263-7 G3F SIC MOSFE |
800 |
|
- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 59A (Tc) | 18V | 53mOhm @ 20A, 18V | 4.3V @ 16mA | 86 nC @ 18 V | +22V, -10V | 2023 pF @ 800 V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
|
|
E4M0045075K1MOSFETS AUTOMOTIVE 139W 3.8V NC |
254 |
|
Таблицы данных |
E | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 42A (Tc) | 15V | 60mOhm @ 17.6A, 15V | 3.8V @ 4.84mA | 65 nC @ 15 V | +19V, -8V | 1606 pF @ 500 V | - | 139W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
|
IMW65R026M2HXKSA1IMW65R026M2HXKSA1 |
390 |
|
Таблицы данных |
CoolSiC™ | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 64A (Tc) | 15V, 20V | 24mOhm @ 34.5A, 20V | 5.6V @ 7mA | 42 nC @ 18 V | +23V, -7V | 1499 pF @ 400 V | - | 227W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-3-40 |
